Deep levels of HgCdTe diodes on Si substrates
Acta Physica Sinica
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Acta Phys. Sin.  2011, Vol. 60 Issue (6): 068502    
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Deep levels of HgCdTe diodes on Si substrates
Hu Xiao-Ning1, Zhang Shan2
(1)Key Laboratory of Infrared Imaging Material and Detectors,Shanghai Institute of Technical Physics, Shanghai 200083, China; (2)Key Laboratory of Infrared Imaging Material and Detectors,Shanghai Institute of Technical Physics, Shanghai 200083, China; Graduated School of Chinese Academy of Sciences, Beijing 100049, China
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