Two-dimensional threshold voltage model of sub-100 nm strained-Si/SiGe nMOSFET
Acta Physica Sinica
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Acta Phys. Sin.  2011, Vol. 60 Issue (7): 077106    
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Current Issue| Next Issue| Archive| Adv Search  |   
Two-dimensional threshold voltage model of sub-100 nm strained-Si/SiGe nMOSFET
Wang Guan-Yu, Zhang He-Ming, Wang Xiao-Yan, Wu Tie-Feng, Wang Bin
Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices,School of Microelectronics, Xidian University,Xi'an 710071,China
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