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One method of non-uniform finger spacing is proposed to enhance thermal stability of multiple finger power heterojunction bipolar transistor. Using coupling thermal resistance to characterize the influence of the change of emitter spacing on thermal coupling, the relation between coupling thermal resistance and emitter spacing is obtained. Temperature distribution on the emitter fingers of multi-finger heterojunction bipolar transistor is studied by a numerical electro-thermal model. The results show that the heterojunction bipolar transistor with non-uniform finger spacing has a smaller temperature difference between fingers thant the traditional uniform finger spacing heterojunction bipolar transistor under the same power dissipation. So the method of non-uniform finger spacing is very effective to enhance the thermal stability.
[1] Comeau J P, Najafizadeh L, Andrews J M, Gnana A P, Cressler J D 2007 IEEE Microw. Wirel Compon. Lett. 17 349
[2] Ma L, Gao Y 2009 Chin. Phys. B 18 303
[3] Lin G J, Lai H K, Li C, Chen S Y,Yu J Z 2008 Chin. Phys. B 17 3479
[4] Hu H Y, Zhang H M, Dai X Y, Jia X Z, Cui X Y, Wang W, Ou J F, Wang X Y 2005 Chin. Phys. 14 1439
[5] Zhou S L,Huang H, Huang Y Q, Ren X M 2007 Acta Phys. Sin. 56 2890 (in Chinese)[周守利、黄 辉、黄永清、任晓敏 2007 物理学报 56 2890]
[6] Cao Y R, Hao Y, Hu S G, Ma X H 2009 Chin. Phys. B 18 309
[7] Liou L L, Bayraktaroglu B, Huang C I 1996 Solid-State Electron 39 165
[8] Zhou W, Sheu S, Liou J J, Huang C I 1998 Solid-State Electron 42 693
[9] Cao Q J, Zhang Y M 2008 Chin. Phys. B 17 4622
[10] Lai C J, Li Z H, Li Z J, Zhang B, Zhang Y R 2009 Chin. Phys. B 18 763
[11] Che Y, Lü H L, Zhang Y M, Zhang Y M 2008 Chin. Phys. B 17 1410
[12] Olsson J 2001 Microelectron. Eng. 56 339
[13] Chang Y C, Du G, Song J F, Wang S X, Luo H L, Ge W K, Wang J N, Wang Y 2002 Solid-State Electron 46 1997
[14] Comeau J P, Najafizadeh L, Andrews J M, Prakash A P G, Cressler J D 2007 IEEE Microw. Wirel. Compon. Lett. 17 349
[15] Adlerstein M G 1998 IEEE Trans. on Elec. Dev. 45 1653
[16] Liu W, Bayraktaroglu B 1993 Solid-State Electron 36 125
[17] Maycock P D 1967 Solid-State Electron 10 61
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[1] Comeau J P, Najafizadeh L, Andrews J M, Gnana A P, Cressler J D 2007 IEEE Microw. Wirel Compon. Lett. 17 349
[2] Ma L, Gao Y 2009 Chin. Phys. B 18 303
[3] Lin G J, Lai H K, Li C, Chen S Y,Yu J Z 2008 Chin. Phys. B 17 3479
[4] Hu H Y, Zhang H M, Dai X Y, Jia X Z, Cui X Y, Wang W, Ou J F, Wang X Y 2005 Chin. Phys. 14 1439
[5] Zhou S L,Huang H, Huang Y Q, Ren X M 2007 Acta Phys. Sin. 56 2890 (in Chinese)[周守利、黄 辉、黄永清、任晓敏 2007 物理学报 56 2890]
[6] Cao Y R, Hao Y, Hu S G, Ma X H 2009 Chin. Phys. B 18 309
[7] Liou L L, Bayraktaroglu B, Huang C I 1996 Solid-State Electron 39 165
[8] Zhou W, Sheu S, Liou J J, Huang C I 1998 Solid-State Electron 42 693
[9] Cao Q J, Zhang Y M 2008 Chin. Phys. B 17 4622
[10] Lai C J, Li Z H, Li Z J, Zhang B, Zhang Y R 2009 Chin. Phys. B 18 763
[11] Che Y, Lü H L, Zhang Y M, Zhang Y M 2008 Chin. Phys. B 17 1410
[12] Olsson J 2001 Microelectron. Eng. 56 339
[13] Chang Y C, Du G, Song J F, Wang S X, Luo H L, Ge W K, Wang J N, Wang Y 2002 Solid-State Electron 46 1997
[14] Comeau J P, Najafizadeh L, Andrews J M, Prakash A P G, Cressler J D 2007 IEEE Microw. Wirel. Compon. Lett. 17 349
[15] Adlerstein M G 1998 IEEE Trans. on Elec. Dev. 45 1653
[16] Liu W, Bayraktaroglu B 1993 Solid-State Electron 36 125
[17] Maycock P D 1967 Solid-State Electron 10 61
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