Influence of interface traps of p-type metal-oxide-semiconductor field effect transistor on single event charge sharing collection
Acta Physica Sinica
Citation Search Quick Search
Acta Phys. Sin.  2011, Vol. 60 Issue (8): 086107     doi:10.7498/aps.60.086107
CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES Current Issue| Archive| Adv Search  |   
Influence of interface traps of p-type metal-oxide-semiconductor field effect transistor on single event charge sharing collection
Chen Jian-Jun, Chen Shu-Ming, Liang Bin, Liu Bi-Wei, Chi Ya-Qing, Qin Jun-Rui, He Yi-Bai
School of Computer Science, National University of Defense Technology, Changsha 410073, China
Copyright © Acta Physica Sinica
Address: Institute of Physics, Chinese Academy of Sciences, P. O. Box 603,Beijing 100190 China
Tel: 010-82649294,82649829,82649863   E-mail: aps8@iphy.ac.cn