Calculation of valence band structure of uniaxial 〈111〉 stressed silicon
Acta Physica Sinica
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Acta Phys. Sin.  2011, Vol. 60 Issue (8): 087101     doi:10.7498/aps.60.087101
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Current Issue| Archive| Adv Search  |   
Calculation of valence band structure of uniaxial 〈111〉 stressed silicon
Ma Jian-Li, Zhang He-Ming, Song Jian-Jun, Wang Xiao-Yan, Wang Guan-Yu, Xu Xiao-Bo
Key Laboratory for Wide Band Gap Semiconductor Materials and Devices of Ministry of Education, School of Microelectronics, Xidian University, Xi’an 710071, China
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