Growth of Ge quantum dot at the mix-crystal interface self-induced on the ion beam sputtering deposition
Acta Physica Sinica
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Acta Phys. Sin.  2011, Vol. 60 Issue (8): 088102     doi:10.7498/aps.60.088102
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Growth of Ge quantum dot at the mix-crystal interface self-induced on the ion beam sputtering deposition
Xiong Fei1,2, Pan Hong-Xing1, Zhang Hui2, Yang Yu1
1. Research Institute of Engineering and Technology, Yunnan University, Kunming 650091, China;
2. Institute of Advanced Materials for Photo-electronics, Kunming University of Science and Technology, Kunming 650093, China
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