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In the study of the noise characteristics of devices by traditional scattering theory,the incoherent transport and the effect of Coulomb interaction on shot noise are not taken into account, which may not be ignored in real nanoscale devices. Based on the equivalent contact model of the scattering region, we derive a unified scattering theory model for current noise, including the effects mentioned above. Our model covers the whole range of transport regime from coherent transport to incoherent transport. Our model also includes the effects of Pauli exclusion and Coulomb interaction on shot noise. Then, a numerical simulation approach is presented for our model. The approach coincides with the equivalent contact model in the property of the scattering region.
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Keywords:
- current noise /
- scattering theory /
- unified model
[1] Landauer R 1957 Ibm. J. Res. Dev. 1 223
[2] Büttiker M 1986 Phys. Rev. Lett. 57 1761
[3] Büttiker M 1990 Phys. Rev. Lett. 65 2901
[4] Martin T,Landauer R 1992 Phys. Rev. B 45 1742
[5] Do V,Dollfus P,Nguyen V 2007 Phys. Rev. B 76 125309
[6] Zhang Z Y,Wang T H 2004 Acta Phy. Sin. 53 942 (in Chinese) [张志勇、王太宏 2004 物理学报 53 942]
[7] An X T,Li Y X,Liu J J 2007 Acta Phy. Sin. 56 4105 (in Chinese) [安兴涛、李玉现、刘建军 2007 物理学报 56 4105]
[8] Venugopal R,Paulsson M,Goasguen S,Datta S,Lundstrom M 2003 J. Appl. Phys. 93 5613
[9] Büttiker M 1991 Physica B: Condensed Matter 175 199
[10] Betti A,Fiori G,Iannaccone G 2010 Phys. Rev. B 81 035329
[11] Büttiker M 1992 Phys. Rev. B 46 12485
[12] Blanter Y,Büttiker M 2000 Physics Reports 336 1
[13] Martin M,Rengel R,Pascual E,Lusakowski J,Knap W,Gonzalez T 2008 Physica Status Solidi (C) 5 123
[14] Van der Ziel A 1986 Noise in solid state devices and circuits(New York:Wiley) 16 and 75—78
[15] Datta S 1995 Electronic transport in mesoscopic systems(London:Cambridge University Press) 307—311
[16] Svizhenko A,Anantram M 2003 IEEE Trans. Electr. Dev. 50 1459
[17] Naveh Y,Averin D,Likharev K 1998 Phys. Rev. B 58 15371
[18] González T,Mateos J,Pardo D,Bulashenko O,Reggiani L 1999 Phys. Rev. B 60 2670
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[1] Landauer R 1957 Ibm. J. Res. Dev. 1 223
[2] Büttiker M 1986 Phys. Rev. Lett. 57 1761
[3] Büttiker M 1990 Phys. Rev. Lett. 65 2901
[4] Martin T,Landauer R 1992 Phys. Rev. B 45 1742
[5] Do V,Dollfus P,Nguyen V 2007 Phys. Rev. B 76 125309
[6] Zhang Z Y,Wang T H 2004 Acta Phy. Sin. 53 942 (in Chinese) [张志勇、王太宏 2004 物理学报 53 942]
[7] An X T,Li Y X,Liu J J 2007 Acta Phy. Sin. 56 4105 (in Chinese) [安兴涛、李玉现、刘建军 2007 物理学报 56 4105]
[8] Venugopal R,Paulsson M,Goasguen S,Datta S,Lundstrom M 2003 J. Appl. Phys. 93 5613
[9] Büttiker M 1991 Physica B: Condensed Matter 175 199
[10] Betti A,Fiori G,Iannaccone G 2010 Phys. Rev. B 81 035329
[11] Büttiker M 1992 Phys. Rev. B 46 12485
[12] Blanter Y,Büttiker M 2000 Physics Reports 336 1
[13] Martin M,Rengel R,Pascual E,Lusakowski J,Knap W,Gonzalez T 2008 Physica Status Solidi (C) 5 123
[14] Van der Ziel A 1986 Noise in solid state devices and circuits(New York:Wiley) 16 and 75—78
[15] Datta S 1995 Electronic transport in mesoscopic systems(London:Cambridge University Press) 307—311
[16] Svizhenko A,Anantram M 2003 IEEE Trans. Electr. Dev. 50 1459
[17] Naveh Y,Averin D,Likharev K 1998 Phys. Rev. B 58 15371
[18] González T,Mateos J,Pardo D,Bulashenko O,Reggiani L 1999 Phys. Rev. B 60 2670
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