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Study of physically modeling for small-scaled strained Si nMOSFET

Qu Jiang-Tao Zhang He-Ming Qin Shan-Shan Xu Xiao-Bo Wang Xiao-Yan Hu Hui-Yong

Citation:

Study of physically modeling for small-scaled strained Si nMOSFET

Qu Jiang-Tao, Zhang He-Ming, Qin Shan-Shan, Xu Xiao-Bo, Wang Xiao-Yan, Hu Hui-Yong
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  • Abstract views:  7660
  • PDF Downloads:  670
  • Cited By: 0
Publishing process
  • Received Date:  23 August 2010
  • Accepted Date:  13 December 2010
  • Published Online:  15 September 2011

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