Threshold voltage degradation mechanism of SOI SONOS EEPROM under total-dose irradiation
Acta Physica Sinica
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Acta Phys. Sin.  2011, Vol. 60 Issue (9): 098502    
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Threshold voltage degradation mechanism of SOI SONOS EEPROM under total-dose irradiation
Zhou Xin-Jie1, Li Lei-Lei2, Yu Zong-Guang2, Xiao Zhi-Qiang3
(1)School of Electronic Science and Engineering, South-East University, Nanjing 210096, China; (2)School of Microelectronics, Xidian University, Xi’an 710071, China;The 58th Research Institute of China Electronics Technology Group Corporation,Wuxi 214035, China; (3)State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;The 58th Research Institute of China Electronics Technology Group Corporation,Wuxi 214035, China
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