1, E1 + △1 region), and the corresponding absorption coefficient is 106cm-1 independent of its degree of disorder. The depth profile of (△R/R)3.55ev is related to that of disorder degree, and the characteristic relations △R/R(D) were obtained for all of the three depth regions. The resulting curve for the implant-damaged region is similar to that reported by Anderson et al. for GaAs layers implanted with inert elements ions. By use of stripping, the observation of the disorder degree dependence of the 3.4 eV structure lineshapes has been realized in a wide range with only one sample. A comparison is made with the lineshape features of vacuum evaporated Ge films. Some conclusions have been drawn from these measurements about the mixed lattice interaction origin of the 3.4 eV spectral region of silion. It has been confirmed that EER is a powerful technique with extremely high sensitivity for the investigation of ion implanted semiconductor layers."/>     ELECTROLYTE ELECTROREFLECTANCE (EER) SPECTROSCOPY OF ION IMPLANTED SILICON LAYER
Acta Physica Sinica
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Acta Phys. Sin.  1982, Vol. 31 Issue (5): 646-653    
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ELECTROLYTE ELECTROREFLECTANCE (EER) SPECTROSCOPY OF ION IMPLANTED SILICON LAYER
QIAN YOU-HUA, CHEN LIANG-YAO
复旦大学物理系
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