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STRESS STUDIES OF AMORPHOUS a-Si:H/a-SiNx:H HETEROJUNCTIONS AND a-Si:H, a-SiNx:H FILMS

WANG WAN-LU LIAO KE-JUN

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STRESS STUDIES OF AMORPHOUS a-Si:H/a-SiNx:H HETEROJUNCTIONS AND a-Si:H, a-SiNx:H FILMS

WANG WAN-LU, LIAO KE-JUN
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  • We have found experimentally that the stress in a-Si:H films is Compressive, and tensile in a-SiNx:H film on the flate silicon substrate with certain content of Si-H bond. The stress in a-Si:H/a-SiNx:H/c-Si system can be made to reach a minimum by suitably chosing some conditions of depositing. The minimum stress may keep for a long time. It is shown that the stress changes with annealing temperature. Some explanation to these results are also given.
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  • Abstract views:  6434
  • PDF Downloads:  659
  • Cited By: 0
Publishing process
  • Received Date:  02 June 1986
  • Accepted Date:  28 May 1987
  • Published Online:  05 June 1987

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