Prepared by using bias magnetron-sputtering, the deposited GdTbFe films possess the suitable parameters for magneto-optical recording. The perpendicular anisotropy constant Ku increases with the increase of bias voltage. By means of the plots from both Johnson-Mehl-Avrami equation and Kissinger equation, the parameters of crystallization kinetics, △E = 2.0eV and n = 1 have been determined for amorphouss Gd27Tb10Fe63 film. The crystallization temperature and active energy AE of the amorphous Gd27Tb10Fe63 film are greater than the binary system, GdCo, GdFe, for example. The isothermal annealing of amorphous Gd27Tb10Fe63 film at various temperature shows that it has a good thermal stability which is required for magneto-opticai recording application.
下载:
