A STUDY ON THE PROPERTIES OF SiO2 THIN FILM THERMALLY NITRIDED IN AMMONIA AND ITS INTERFACE

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A STUDY ON THE PROPERTIES OF SiO2 THIN FILM THERMALLY NITRIDED IN AMMONIA AND ITS INTERFACE

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QI MING, LUO JIN-SHENG

Acta Phys. Sin., 1988, 37(10): 1600-1606.

Abstract
The properties of thermally nitrided SiO2 thin film and its interface have been studied. It is found that the chemical composition, refractive index, electron trap parameters, surface mobility, fixed charge and interfacial state densities are dependent obviously on the annealing condition in ammonia. The mechanism of nitridation, anti-oxidation, and the effect of nitridation on interfacial characteristics are discussed.
Authors and contacts
QI MING,

LUO JIN-SHENG

1.
西安交通大学电子工程系
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