The electrical resistivity and magnetoresistance of amorphous Cu33Y67 alloy has been measured. The alloy was prepared by melt-spinning in He gas. Interaction effect can provide a good quantitative explanation for the temperature depen-dence of the electrical resistivity at low temperatures with a main contribution of the form of T1/2 below 4.5 K. Its variation at higher temperatures can also be explained by a combination of interaction and weak localization effects. The magnetoresistance measurements up to 1.8 Tesla reveals predominant localization effects with a strong influence of the spin-orbit scattering. The data are rather larger than that predicted by weak localization. An overall good fit is obtained if one increases the theoretically predicted strength of localization by 3 times. One fitting parameter, spin-orbit scattering time τ50, is unchanged, while inelastic scattering time τi's used fitting to two set of the data of resistivity and magnetoresistance are close to each other.
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