The influence of channel size on total dose irradiation and hot-carrier effects of sub-micro NMOSFET
Acta Physica Sinica
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Acta Phys. Sin  2012, Vol. 61 Issue (2): 026102     doi:10.7498/aps.61.026102
CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES Current Issue| Archive| Adv Search  |   
The influence of channel size on total dose irradiation and hot-carrier effects of sub-micro NMOSFET
Cui Jiang-Wei1 2 3, Yu Xue-Feng1 2, Ren Di-Yuan1 2, Lu Jian1 2 3
1. The Xinjiang Technical Institute of Physics & Chemistry, CAS, Urumqi 830011, China;
2. Xinjiang Key Laboratory of Electric Information Materials and Devices, Urumuqi 830011, China;
3. Graduate School of the Chinese Academy of Sciences, Beijing 100049, China
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