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The influence of channel length on total ionizing dose effect in a 180 nm complementary metal-oxide semiconductor technology is studied. When other conditions such as radiation bias, device structure are the same, the overall radiation response is determined by the charges trapped in the oxide. The off-state leakage due to the charges trapped in the shallow trench isolation oxide inverting the parasitic sidewall channel has correlation with the channel length. A shorter channel leads to a larger leakage current. For the first time, we report that the leakage current also exhibits the radiation enhanced channel-length modulation effect, which further degrades the device performance.
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Keywords:
- total ionizing dose /
- shallow trench isolation /
- oxide trapped charge /
- metal-oxide-semiconductor field effect transistor
[1] Schwank J R, Shaneyfelt M R, Fleetwood D M, Felix J A, DoddP E, Paillet P, Ferlet-Cavrois V 2008 IEEE Trans. Nucl. Sci. 551833
[2] Zhang T Q, Liu C Y, Liu J L, Wang J P, Huang Z, Xu N J, He B P,Peng H L, Yao Y J 2001 Acta Phys. Sin. 50 2434 (in Chinese) [张廷庆, 刘传洋, 刘家璐, 王剑屏, 黄智, 徐娜军, 何宝平,彭宏论, 姚育娟 2001 物理学报 50 2434]
[3] Chen W H, Du L, Zhuang Y Q, Bao J L, He L, Zhang T F, ZhangX 2009 Acta Phys. Sin. 58 4090 (in Chinese) [陈伟华,杜磊, 庄奕琪, 包军林, 何亮, 张天福, 张雪 2009 物理学报 58 4090]
[4] Esqueda I S, Barnaby H J, Alles L M 2005 IEEE Trans. Nucl. Sci.52 2259
[5] Faccio F, Barnaby H J, Chen X J, Fleetwood D M, Gonella L,McLain M, Schrimpf R D 2008 Microelectronics Reliability 481000
[6] Meng Z Q, Hao Y, Tang Y, Ma X H, Zhu Z W, Li Y K 2007 Chin.J. Semiconduct. 28 241 (in Chinese) [孟志琴,郝跃, 唐瑜, 马晓华, 朱志炜, 李永坤 2007 半导体学报 28 241]
[7] Wang S H, Lu Q,WangWH, An X, Huang R 2010 Acta Phys. Sin.59 1970 (in Chinese) [王思浩,鲁庆, 王文华, 安霞, 黄如 2010 物理学报 59 1970]
[8] Gonella L, Faccio F, Silvestri M, Gerardin S, Pantano D, Re V,Manghisoni M, Ratti L, Ranieri A 2007 Nucl. Instrum. MethodsPhys. Res. A 582 750
[9] McLain M, Barnaby H J, Holbert K E, Schrimpf R D, Shah H,Amort A, Baze M, Wert J 2007 IEEE Trans. Nucl. Sci. 54 2210
[10] Chen X B, Zhang Q Z 2008 Transistor Principle and Design (Vol.2) (Beijing: Publishing House of Electronics Industry) p297 (inChinese) [陈星弻, 张庆忠 2008晶体管原理与设计(第2版)(电子工业出版社) 第297页]
[11] Youk G U, Khare P S, Schrimpf R D, Massengill L W, GallowayK F 1999 IEEE Trans. Nucl. Sci. 46 1830
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[1] Schwank J R, Shaneyfelt M R, Fleetwood D M, Felix J A, DoddP E, Paillet P, Ferlet-Cavrois V 2008 IEEE Trans. Nucl. Sci. 551833
[2] Zhang T Q, Liu C Y, Liu J L, Wang J P, Huang Z, Xu N J, He B P,Peng H L, Yao Y J 2001 Acta Phys. Sin. 50 2434 (in Chinese) [张廷庆, 刘传洋, 刘家璐, 王剑屏, 黄智, 徐娜军, 何宝平,彭宏论, 姚育娟 2001 物理学报 50 2434]
[3] Chen W H, Du L, Zhuang Y Q, Bao J L, He L, Zhang T F, ZhangX 2009 Acta Phys. Sin. 58 4090 (in Chinese) [陈伟华,杜磊, 庄奕琪, 包军林, 何亮, 张天福, 张雪 2009 物理学报 58 4090]
[4] Esqueda I S, Barnaby H J, Alles L M 2005 IEEE Trans. Nucl. Sci.52 2259
[5] Faccio F, Barnaby H J, Chen X J, Fleetwood D M, Gonella L,McLain M, Schrimpf R D 2008 Microelectronics Reliability 481000
[6] Meng Z Q, Hao Y, Tang Y, Ma X H, Zhu Z W, Li Y K 2007 Chin.J. Semiconduct. 28 241 (in Chinese) [孟志琴,郝跃, 唐瑜, 马晓华, 朱志炜, 李永坤 2007 半导体学报 28 241]
[7] Wang S H, Lu Q,WangWH, An X, Huang R 2010 Acta Phys. Sin.59 1970 (in Chinese) [王思浩,鲁庆, 王文华, 安霞, 黄如 2010 物理学报 59 1970]
[8] Gonella L, Faccio F, Silvestri M, Gerardin S, Pantano D, Re V,Manghisoni M, Ratti L, Ranieri A 2007 Nucl. Instrum. MethodsPhys. Res. A 582 750
[9] McLain M, Barnaby H J, Holbert K E, Schrimpf R D, Shah H,Amort A, Baze M, Wert J 2007 IEEE Trans. Nucl. Sci. 54 2210
[10] Chen X B, Zhang Q Z 2008 Transistor Principle and Design (Vol.2) (Beijing: Publishing House of Electronics Industry) p297 (inChinese) [陈星弻, 张庆忠 2008晶体管原理与设计(第2版)(电子工业出版社) 第297页]
[11] Youk G U, Khare P S, Schrimpf R D, Massengill L W, GallowayK F 1999 IEEE Trans. Nucl. Sci. 46 1830
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