Theoretical study of linewidth enhancement factor of InGaAs/GaAs strained quantum well lasers
Acta Physica Sinica
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Acta Phys. Sin  2012, Vol. 61 Issue (5): 054209     doi:10.7498/aps.61.054209
ELECTROMAGENTISM, OPTICS, ACOUSTICS, HEAT TRANSFER, CLASSICAL MECHANICS, AND FLUID DYNAMICS Current Issue| Archive| Adv Search  |   
Theoretical study of linewidth enhancement factor of InGaAs/GaAs strained quantum well lasers
Zhang Fan1, Li Lin1, Ma Xiao-Hui1, Li Zhan-Guo1, Sui Qing-Xue2, Gao Xin1, Qu Yi1, Bo Bao-Xue1, Liu Guo-Jun1
1. National Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022, China;
2. The Changchun Regional Office of the Armored Forces Representative Bureau, the Equipment Headquarters of the P.L.A., Changchun 130103, China
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