Effects of 3 MeV proton irradiations on AlGaN/GaN high electron mobility transistors
Acta Physica Sinica
Citation Search Quick Search
Acta Phys. Sin  2012, Vol. 61 Issue (5): 057202     doi:10.7498/aps.61.057202
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Current Issue| Archive| Adv Search  |   
Effects of 3 MeV proton irradiations on AlGaN/GaN high electron mobility transistors
Lü Ling, Zhang Jin-Cheng, Li Liang, Ma Xiao-Hua, Cao Yan-Rong, Hao Yue
School of Microelectronics, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China
Copyright © Acta Physica Sinica
Address: Institute of Physics, Chinese Academy of Sciences, P. O. Box 603,Beijing 100190 China
Tel: 010-82649294,82649829,82649863   E-mail: aps8@iphy.ac.cn