Hole scattering mechanism in tetragonal strained Si
Acta Physica Sinica
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Acta Phys. Sin  2012, Vol. 61 Issue (5): 057304     doi:10.7498/aps.61.057304
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Current Issue| Archive| Adv Search  |   
Hole scattering mechanism in tetragonal strained Si
Song Jian-Jun, Zhang He-Ming, Hu Hui-Yong, Wang Xiao-Yan, Wang Guan-Yu
Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China
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