Stress models relevant to Raman spectrum in uniaxial/biaxial strained Si
Acta Physica Sinica
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Acta Phys. Sin  2012, Vol. 61 Issue (4): 047203     doi:10.7498/aps.61.047203
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Current Issue| Archive| Adv Search  |   
Stress models relevant to Raman spectrum in uniaxial/biaxial strained Si
Wang Cheng, Wang Guan-Yu, Zhang He-Ming, Song Jian-Jun, Yang Chen-Dong, Mao Yi-Fei, Li Yong-Mao, Hu Hui-Yong, Xuan Rong-Xi
Key Lab of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi’an 710071, China
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