Ge-vacancy complexes in Ge-doped czochralski silicon crystal
Acta Physica Sinica
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Acta Phys. Sin  2012, Vol. 61 Issue (6): 063101     doi:10.7498/aps.61.063101
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Ge-vacancy complexes in Ge-doped czochralski silicon crystal
Wu Tai-Quan
Department of Physics, China Jiliang Universtiy, Hangzhou 310018, China
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