Epitaxial growth of thick Ge layers with low dislocation density on silicon substrate by UHV/CVD
Acta Physica Sinica
Citation Search Quick Search
Acta Phys. Sin  2012, Vol. 61 Issue (7): 078104     doi:10.7498/aps.61.078104
Current Issue| Archive| Adv Search  |   
Epitaxial growth of thick Ge layers with low dislocation density on silicon substrate by UHV/CVD
Chen Cheng-Zhao1 2,Zheng Yuan-Yu1,Huang Shi-Hao1,Li Cheng1,Lai Hong-Kai1,Chen Song-Yan1
1. Department of Physics, Semiconductor Photonics Research Center, Xiamen University, Xiamen 361005, China;
2. Department of Physics and Electronic Engineering, Hanshan Normal University, Chaozhou 521041, China