Analytical modeling of asymmetric HALO-doped surrounding-gate MOSFET with gate overlapped lightly-doped drain
Acta Physica Sinica
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Acta Phys. Sin  2012, Vol. 61 Issue (7): 078504     doi:10.7498/aps.61.078504
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Analytical modeling of asymmetric HALO-doped surrounding-gate MOSFET with gate overlapped lightly-doped drain
Li Cong1,Zhuang Yi-Qi1,Han Ru2,Zhang Li1,Bao Jun-Lin1
1. Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;
2. Aviation Microelectronics Center, Northwestern Polytechnic University., Xi'an 710072, China
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