FORMATION OF HOLOGRAPHIC DIFFRACTION GRATINGS ON THE SURFACE OF A n-TYPE Ga As AND MEASURING OF LIGHT EMISSION BY SURFACE PLASMON POLARITON

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FORMATION OF HOLOGRAPHIC DIFFRACTION GRATINGS ON THE SURFACE OF A n-TYPE Ga As AND MEASURING OF LIGHT EMISSION BY SURFACE PLASMON POLARITON

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WU DlNG-XIANG

Acta Phys. Sin., 1992, 41(2): 282-287.

Abstract
The method to produce diffraction gratings by H2O2-H2SO4 photo-accelerated etching on the surface of n-GaAs and measuring of light emission by surface pla smon polariton from an Ag/n-GaAs Schottky barrier diode are discussed in this paper.
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WU DlNG-XIANG

1.
上海科学技术大学物理系,上海,201800
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