The effect of ITO annealing on electrical characteristic of GaN based LED
Acta Physica Sinica
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Acta Phys. Sin  2012, Vol. 61 Issue (13): 137303     doi:10.7498/aps.61.137303
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Current Issue| Archive| Adv Search  |   
The effect of ITO annealing on electrical characteristic of GaN based LED
Liu Jian-Peng, Zhu Yan-Xu, Guo Wei-Ling, Yan Wei-Wei, Wu Guo-Qing
Beijing Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100124, China
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