The preparation and performance analysis of GaN-based high-voltage DC light emitting diode
Acta Physica Sinica
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Acta Phys. Sin  2012, Vol. 61 Issue (13): 138502     doi:10.7498/aps.61.138502
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The preparation and performance analysis of GaN-based high-voltage DC light emitting diode
Cao Dong-Xing1 2, Guo Zhi-You1, Liang Fu-Bo2, Yang Xiao-Dong2, Huang Hong-Yong1
1. Laboratory of Nanophotonic Functional Materials and Devices, Institute of Optoelectronic Material and Technology, South China Normal University, Guangzhou 510631, China;
2. Yinyu Semiconductor Photonics Ltd., Jiangmen 529728, China
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