The model of valence-band dispersion for strained Ge/Si<sub>1-<em>x</em></sub>Ge<sub><em>x</em></sub>
Acta Physica Sinica
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Acta Phys. Sin  2012, Vol. 61 Issue (13): 137104     doi:10.7498/aps.61.137104
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Current Issue| Archive| Adv Search  |   
The model of valence-band dispersion for strained Ge/Si1-xGex
Dai Xian-Ying, Yang Cheng, Song Jian-Jun, Zhang He-Ming, Hao Yue, Zheng Ruo-Chuan
School of Microelectronic,Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China
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