First-principles study of interface relaxation effects on interface structure, band structure and optical property of InAs/GaSb superlattices [an error occurred while processing this directive]
Acta Physica Sinica
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Acta Phys. Sin.  2012, Vol. 61 Issue (11): 117301    
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Current Issue| Next Issue| Archive| Adv Search [an error occurred while processing this directive] | [an error occurred while processing this directive] 
First-principles study of interface relaxation effects on interface structure, band structure and optical property of InAs/GaSb superlattices
Sun Wei-Feng1, Zheng Xiao-Xia2
1. Key Laboratory of Engineering Dielectrics and Its Application, Ministry of Education, Heilongjiang Provincial Key Laboratory of Dielectric Engineering, School of Electrical and Electronic Engineering, Harbin University of Science and Technology, Harbin 150080, China;
2. Department of Computer Science and Technology, Heilongjiang Institute of Technology, Harbin 150050, China
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