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Based on the relationship between ionizing damage effect and displacement damage effect under radiation degradation mechanism of pn-junction diode, and combined with the noise theory of radiation degradation of pn-junction diode, a change law of low frequency noise of pn-junction diode under radiation found. The inconsistency between the change laws of of two kinds of effects is found. Based on the experimental result, the relationship between two kinds of effects is judged. This relationship can explain the experimental result. This is very important for the device hardening research.
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Keywords:
- pn junction /
- radiation damage /
- 1/f noise /
- damage
[1] Chen P X 2005 Radiation Effects on Semiconductor Devices and Integrated Circuits (National Defense Industry Press) (in Chinese) [陈盘训 2005 半导体器件和集成电路的辐射效应 (国防工业出版社)]
[2] Horne W E Literatrue Search and Radiation Study on Electronic Parts (in Chinese) [霍恩 1974 辐射对电子元件器件的影响 (国防工业出版社)]
[3] Wang J R, Gao Z L 1996 J. Nucl. Argic. Sci. 17 75 (in Chinese) [王锦荣, 高仲林 1996 核农学通报 17 75]
[4] Zhao H F, Du L, He L 2011 Acta Phys. Sin. 60 028501 (in Chinese) [赵鸿飞, 杜磊, 何亮 2011 物理学报 60 028501]
[5] Jevtic M M 1995 Microelectronics Reliability 35 1925
[6] Huang Y C,Liu D F 2005 Acta Phys. Sin. 54 2261 (in Chinese) [黄杨程, 刘大福 2005 物理学报 54 2261]
[7] Snow E H, Grove A S, Fitzgerald D J 1967 Proceedings Of The IEEE. 55 1168
[8] Barnaby H J, Analytical 2002 IEEE Trans. Nucl. Sci. 49 2643
[9] Zhuang Y Q, Sun Q 1993 Noise and its Minimizing Technology in Semiconductor Devices (National Defense Industry Press) (in Chinese) [庄奕琪, 孙青 1993 半导体器件中的噪声及其低噪声化技术 (国防工业出版社)]
[10] Liu E K, Zhu B S, Luo J S 1994 Semiconductor Physics (National Defense Industry Press) p116 (in Chinese) [刘恩科, 朱秉升, 罗晋生 1994 半导体物理学 (国防工业出版社)第116页]
[11] Fan-Chi Hou, Gijs Bosman, Eddy Simoen 1998 IEEE Transaction on Electron Devices 45 2528
[12] Chen W H, Du L, Zhuang Y Q 2009 Acta Phys. Sin. 58 4090 (in Chinese) [陈伟华, 杜磊, 庄奕琪 2009 物理学报 58 4090
[13] Claeys C, Simoen E 2008 Radiation Effects in Advanced Semiconductor Materials and Devices (National Defense Industry Press) (in Chinese) [刘忠立 2008 先进半导体材料及器件的辐射效应 (国防工业出版社)]
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[1] Chen P X 2005 Radiation Effects on Semiconductor Devices and Integrated Circuits (National Defense Industry Press) (in Chinese) [陈盘训 2005 半导体器件和集成电路的辐射效应 (国防工业出版社)]
[2] Horne W E Literatrue Search and Radiation Study on Electronic Parts (in Chinese) [霍恩 1974 辐射对电子元件器件的影响 (国防工业出版社)]
[3] Wang J R, Gao Z L 1996 J. Nucl. Argic. Sci. 17 75 (in Chinese) [王锦荣, 高仲林 1996 核农学通报 17 75]
[4] Zhao H F, Du L, He L 2011 Acta Phys. Sin. 60 028501 (in Chinese) [赵鸿飞, 杜磊, 何亮 2011 物理学报 60 028501]
[5] Jevtic M M 1995 Microelectronics Reliability 35 1925
[6] Huang Y C,Liu D F 2005 Acta Phys. Sin. 54 2261 (in Chinese) [黄杨程, 刘大福 2005 物理学报 54 2261]
[7] Snow E H, Grove A S, Fitzgerald D J 1967 Proceedings Of The IEEE. 55 1168
[8] Barnaby H J, Analytical 2002 IEEE Trans. Nucl. Sci. 49 2643
[9] Zhuang Y Q, Sun Q 1993 Noise and its Minimizing Technology in Semiconductor Devices (National Defense Industry Press) (in Chinese) [庄奕琪, 孙青 1993 半导体器件中的噪声及其低噪声化技术 (国防工业出版社)]
[10] Liu E K, Zhu B S, Luo J S 1994 Semiconductor Physics (National Defense Industry Press) p116 (in Chinese) [刘恩科, 朱秉升, 罗晋生 1994 半导体物理学 (国防工业出版社)第116页]
[11] Fan-Chi Hou, Gijs Bosman, Eddy Simoen 1998 IEEE Transaction on Electron Devices 45 2528
[12] Chen W H, Du L, Zhuang Y Q 2009 Acta Phys. Sin. 58 4090 (in Chinese) [陈伟华, 杜磊, 庄奕琪 2009 物理学报 58 4090
[13] Claeys C, Simoen E 2008 Radiation Effects in Advanced Semiconductor Materials and Devices (National Defense Industry Press) (in Chinese) [刘忠立 2008 先进半导体材料及器件的辐射效应 (国防工业出版社)]
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