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Threshold-voltage and hole-sheet-density model of quantum well Si/SiGe/Si p field effect transistor

Li Li Liu Hong-Xia Yang Zhao-Nian

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Threshold-voltage and hole-sheet-density model of quantum well Si/SiGe/Si p field effect transistor

Li Li, Liu Hong-Xia, Yang Zhao-Nian
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  • Abstract views:  8125
  • PDF Downloads:  517
  • Cited By: 0
Publishing process
  • Received Date:  13 December 2011
  • Accepted Date:  19 January 2012
  • Published Online:  05 August 2012

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