Back-gate bias effect on partially depleted SOI/MOS back-gate performances under radiation condition
Acta Physica Sinica
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Acta Phys. Sin  2012, Vol. 61 Issue (20): 206102     doi:10.7498/aps.61.206102
CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES Current Issue| Archive| Adv Search  |   
Back-gate bias effect on partially depleted SOI/MOS back-gate performances under radiation condition
Zhou Xin-Jie1 2, Li Lei-Lei2, Zhou Yi2, Luo Jing2, Yu Zong-Guang2
1. School of Electronic Science and Engineering, Southeast University, Nanjing 210096, China;
2. No.58th Research Institute of China Electronics Technology Group Corporation, Wuxi 214035, China
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