The total dose irradiation effects of SOI NMOS devices under different bias conditions
Acta Physica Sinica
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Acta Phys. Sin.  2012, Vol. 61 Issue (22): 220702     doi:10.7498/aps.61.220702
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The total dose irradiation effects of SOI NMOS devices under different bias conditions
Zhuo Qing-Qing, Liu Hong-Xia, Yang Zhao-Nian, Cai Hui-Min, Hao Yue
Key Laboratory for Wide Band Gap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian University, Xi’an 710071, China
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