3 × √3 reconstruction, and that the MnSi1.7 nanowires are about ~ 3 nm high, 16—18 nm wide and 500—1500 nm long. The binding energies of the Mn 2p1/2 level and Mn 2p3/2 level for MnSi film are 649.7 and 638.7 eV, respectively, which coincide with those of MnSi1.7 nanowires. The Mn 2p3/2 and Mn 2p1/2 peaks which are located at 640—645 eV and ~653.8 eV indicate that an oxide layer formed on the surfaces of film and nanowires because of short-time exposure to the atmosphere. The negative chemical shifts for MnSi film and MnSi1.7 nanowires from Si2p spectra indicate that with the formation of manganese silicides, the chemical state of Si is changed."/>     Scanning tunneling mircroscopy and X-ray photoelectron spectroscopy studies of MnSi film and MnSi<sub>1.7</sub> nanowires grown on Si substrates
Acta Physica Sinica
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Acta Phys. Sin.  2012, Vol. 61 Issue (22): 227301     doi:10.7498/aps.61.227301
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Current Issue| Archive| Adv Search  |   
Scanning tunneling mircroscopy and X-ray photoelectron spectroscopy studies of MnSi film and MnSi1.7 nanowires grown on Si substrates
Shi Gao-Ming1 2, Zou Zhi-Qiang1 2, Sun Li-Min1, Li Wei-Cong1, Liu Xiao-Yong1 2
1. Instrumental Analysis Center, Shanghai Jiaotong University, Shanghai 200240, China;
2. Department of Physics, Shanghai Jiaotong University, Shanghai 200240, China
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