The investigation of performance improvement of GaN-based dual-wavelength light-emitting diodes with various thickness of quantum barriers
Acta Physica Sinica
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Acta Phys. Sin  2012, Vol. 61 Issue (17): 178504     doi:10.7498/aps.61.178504
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The investigation of performance improvement of GaN-based dual-wavelength light-emitting diodes with various thickness of quantum barriers
Chen Jun1 2, Fan Guang-Han2, Zhang Yun-Yan2
1. Experimental Teaching Center, Guangdong University of Technology, Guangzhou 510006, China;
2. Institute of Opto-Electronic Materials and Technology, South China Normal University, Guangzhou 510631, China
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