Stability of organic light-emitting device

Zhang Xin-Wen; Hu Qi

doi:10.7498/aps.61.207802

Abstract

Organic light-emitting device (OLED) has well-recognized advantages in simple structure, low-driving voltage, flexibility, large area and availablity. It shows tremendous commercial applications in optical communication, information display and solid-state lighting, and has been one of the most attractive projects in optoelectronic information field over the last decade. Since 1987, OLED has rapidly developed, its brightness and efficiency has reached the practical demands. However, one of the main challenges to the industrialization is the stability of the device. In this paper, some of the extrinsic and intrinsic degradation mechanisms in OLEDs are summarized and discussed, such as the dark-spot formation, morphological instability of organic thin film, metal-atom diffusion, Alq3 cationic and positive charge accumulation. After that, we summarize the approaches to obtaining the long lifetime OLED. Finally, some perspectives on the stability of OLED are proposed.

Keywords:

Authors and contacts

1.
Key Laboratory for Organic Electronics and Information Displays, Institute of Advanced Materials, Nanjing University of Posts and Telecommunications, Nanjing 210046, China
Funds: Project supported by the National Basic Research Program of China (Grant Nos. 2009CB930600, 2012CB723402, 2012CB933301), the National Natural Science Foundation of China (Grant No. 61204048), the Natural Science Foundation of the Education Committee of Jiangsu Province, China (Grant No. 12KJB510013), the Scientific Research Foundation of Nanjing University of Posts and Telecommunications, China (Grant No. NY211025), and the Project of the Priority Academic Program Development of Jiangsu Higher Education Institutions.

References

[1]	Tang C W, Vanslyke S A 1987 Appl. Phys. Lett. 51 913
[2]	Shen Z L, Burrows P E, Bulovic V, Forrest S R, Thompson M E 1997 Science 276 2009
[3]	McCarthy M A, Liu B, Donoghue E P, Kravchenko I, Kim D Y, So F, Rinzler A G 2011 Science 332 570
[4]	Helander M G, Wang Z B, Qiu J, Greiner M T, Puzzo D P, Liu Z W, Lu Z H 2011 Science 332 947
[5]	Sun Y R, Giebink N C, Kanno H, Ma B W, Thompson M E, Forrest S R 2006 Nature 440 908
[6]	Reineke S, Lindner F, Schwartz G, Seidler N, Walzer K, Lussem B, Leo K 2009 Nature 459 234
[7]	Muller C D, Falcou A, Reckefuss N, Rojahn M, Wiederhirn V, Rudati P, Frohne H, Nuyken O, Becker H, Meerholz K 2003 Nature 421 829
[8]	Han T H, Lee Y, Choi M R, Woo S H, Bae S H, Hong B H, Ahn J H, Lee T W 2012 Nat. Photonics 6 105
[9]	Krieg T, Petr A, Barkleit G, Dunsch L 1999 Appl. Phys. Lett. 74 3639
[10]	Mori T, Mitsuoka T, Ishii M, Fujikawa H, Taga Y 2002 Appl. Phys. Lett. 80 3895
[11]	Grozea D, Turak A, Yuan Y, Han S, Lu Z H, Kim W Y 2007 J. Appl. Phys. 101 033522
[12]	Aziz H, Xu G 1997 J. Phys. Chem. B 101 4009
[13]	Aziz H, Popovic Z, Tripp C P, Hu N X, Hor A M, Xu G 1998 Appl. Phys. Lett. 72 2642
[14]	Kim J S, Ho P K H, Murphy C E, Seeley A, Grizzi I, Burroughes J H, Friend R H 2004 Chem. Phys. Lett. 386 2
[15]	Ikeda T, Murata H, Kinoshita Y, Shike J, Ikeda Y, Kitano M 2006 Chem. Phys. Lett. 426 111
[16]	Lee J Y 2004 Chem. Phys. Lett. 393 260
[17]	Melpignano P, Baron-Toaldo A, Biondo V, Priante S, Zamboni R, Murgia M, Caria S, Gregoratti L, Barinov A, Kiskinova M 2005 Appl. Phys. Lett. 86 041105
[18]	Matsushima T, Murata H 2008 J. Appl. Phys. 104 034507
[19]	Wang Q, Luo Y C, Aziz H 2010 Appl. Phys. Lett. 97 063309
[20]	Wang Q, Aziz H 2011 Org. Electron. 12 1571
[21]	Li J, Sano T, Hirayama Y, Tomita T, Fujii H, Wakisaka K 2006 J. Appl. Phys. 100 034506
[22]	Aziz H, Luo Y C, Xu G, Popovic Z D 2006 Appl. Phys. Lett. 89 103515
[23]	Luo Y C, Aziz H, Xu G, Popovic Z D 2007 J. Appl. Phys. 101 054512
[24]	Choi S H, Lee T I, Baik H K, Roh H H, Kwon O, Suh D H 2008 Appl. Phys. Lett. 93 183301
[25]	Nenna G, Barra M, Cassinese A, Miscioscia R, Fasolino T, Tassini P, Minarini C, Della Sala D 2009 J. Appl. Phys. 105 123511
[26]	Tsai Y S, Wang S H, Chen C H, Cheng C L, Liao T C 2009 Appl. Phys. Lett. 95 233306
[27]	Chung S, Lee J H, Jeong J, Kim J J, Hong Y 2009 Appl. Phys. Lett. 94 253302
[28]	Aziz H, Popovic Z D 2004 Chem. Mater. 16 4522
[29]	Tak Y H, Kim K B, Park H G, Lee K H, Lee J R 2002 Thin Solid Films 411 12
[30]	Zhang X W, Wu Z X, Wang D D, Wang D W, Hou X 2009 Appl. Surf. Sci. 255 7970
[31]	Burrows P E, Bulovic V, Forrest S R, Sapochak L S, McCarty D M, Thompson M E 1994 Appl. Phys. Lett. 65 2922
[32]	Akande W O, Soboyejo W 2009 Appl. Phys. Lett. 95 113304
[33]	Schaer M, Nuesch F, Berner D, Leo W, Zuppiroli L 2001 Adv. Funct. Mater. 11 116
[34]	Jonda C, Mayer A B R, Stolz U, Elschner A, Karbach A 2000 J. Mater. Sci. 35 5645
[35]	McElvain J, Antoniadis H, Hueschen M R, Miller J N, Roitman D M, Sheats J R, Moon R L 1996 J. Appl. Phys. 80 6002
[36]	Savvateev V N, Yakimov A V, Davidov D, Pogreb R M, Neumann R, Avny Y 1997 Appl. Phys. Lett. 71 3344
[37]	Park J S, Chae H, Chung H K, Lee S I 2011 Semicond. Sci. Technol. 26 034001
[38]	Ishii M, Taga Y 2002 Appl. Phys. Lett. 80 3430
[39]	So F, Kondakov D 2010 Adv. Mater. 22 3762
[40]	Xu M S, Xu J B, Chen H Z, Wang M 2004 J. Phys. D: Appl. Phys. 37 2618
[41]	Vestweber H, Riess W 1997 Synth. Met. 91 181
[42]	Lee S T, Gao Z Q, Hung L S 1999 Appl. Phys. Lett. 75 1404
[43]	Suh M C, Chung H K, Kim S Y, Kwon J H, Chin B D 2005 Chem. Phys. Lett. 413 205
[44]	Luo Y C, Aziz H, Popovic Z D, Xu G 2007 J. Appl. Phys. 101 034510
[45]	Aziz H, Popovic Z D, Hu N X, Hor A M, Xu G 1999 Science 283 1900
[46]	Kondakov D Y, Sandifer J R, Tang C W, Young R H 2003 J. Appl. Phys. 93 1108
[47]	Han E M, Do L M, Yamamoto N, Fujihira M 1996 Thin Solid Films 273 202
[48]	Lee Y J, Lee H, Byun Y, Song S, Kim J E, Eom D, Cha W, Park S S, Kim J, Kim H 2007 Thin Solid Films 515 5674
[49]	Aziz H, Popovic Z, Xie S, Hor A M, Hu N X, Tripp C, Xu G 1998 Appl. Phys. Lett. 72 756
[50]	Adachi C, Nagai K, Tamoto N 1995 Appl. Phys. Lett. 66 2679
[51]	Cui J, Huang Q L, Veinot J C G, Yan H, Wang Q W, Hutchison G R, Richter A G, Evmenenko G, Dutta P, Marks T J 2002 Langmuir 18 9958
[52]	Lee J, Sohn S, Yun H J, Shin H J 2008 Appl. Phys. Lett. 93 133310
[53]	Cumpston B H, Jensen K F 1996 Appl. Phys. Lett. 69 3941
[54]	Probst M, Haight R 1997 Appl. Phys. Lett. 70 1420
[55]	Anjos P N, Aziz H, Hu N X, Popovic Z D 2002 Org. Electron. 3 9
[56]	Luo Y C, Aziz H, Popovic Z D, Xu G 2006 J. Appl. Phys. 99 054508
[57]	Luo Y C, Aziz H, Xu G, Popovic Z D 2007 Chem. Mater. 19 2079
[58]	Popovic Z D, Aziz H, Hu N X, Ioannidis A, Anjos P N 2001 J. Appl. Phys. 89 4673
[59]	Shen J, Wang D, Langlois E, Barrow W A, Green P J, Tang C W, Shi J 2000 Synth. Met. 111 233
[60]	Matsumura M, Ito A, Miyamae Y 1999 Appl. Phys. Lett. 75 1042
[61]	Meerheim R, Walzer K, Pfeiffer M, Leo K 2006 Appl. Phys. Lett. 89 061111
[62]	van Slyke S A, Chen C H, Tang C W 1996 Appl. Phys. Lett. 69 2160
[63]	Hamada Y, Sano T, Shibata K, Kuroki K 1995 Jpn. J. Appl. Phys. 34 L824
[64]	Wang D D, Wu Z X, Zhang X W, Jiao B, Liang S X, Wang D W, He R L, Hou X 2010 Org. Electron. 11 641
[65]	Zhang X W, Wu Z X, Jiao B, Wang D D, Wang D W, Hou X, Huang W 2012 J. Lumin 132 697
[66]	Wang D D, Wu Z X, Zhang X W, Wang D W, Hou X 2010 J. Lumin 130 321
[67]	Kim J S, Granstrom M, Friend R H, Johansson N, Salaneck W R, Daik R, Feast W J, Cacialli F 1998 J. Appl. Phys. 84 6859
[68]	Wu C C, Wu C I, Sturm J C, Kahn A 1997 Appl. Phys. Lett. 70 1348
[69]	Lu H T, Yokoyama M 2004 J. Cryst. Growth 260 186
[70]	Ho J J 2003 Electron. Lett. 39 458
[71]	Yu H Y, Feng X D, Grozea D, Lu Z H, Sodhi R N S, Hor A M, Aziz H 2001 Appl. Phys. Lett. 78 2595
[72]	Chan I M, Cheng W C, Hong F C 2002 Appl. Phys. Lett. 80 13
[73]	Choi B, Yoon H, Lee H H 2000 Appl. Phys. Lett. 76 412
[74]	Mason M G, Hung L S, Tang C W, Lee S T, Wong K W, Wang M 1999 J. Appl. Phys. 86 1688
[75]	Qiu Y, Zhang D Q, Wang L D, Wu G S 2001 Synth. Met. 125 415
[76]	Nuesch F, Rothberg L J, Forsythe E W, Le Q T, Gao Y L 1999 Appl. Phys. Lett. 74 880
[77]	Wang J, Lu L, Jiang W L, Zhang Y F, Zhao Y, Hou J Y, Liu S Y 2005 Chin. Phys. Lett. 22 727
[78]	Sharma A, Kippelen B, Hotchkiss P J, Marder S R 2008 Appl. Phys. Lett. 93 163308
[79]	Shirota Y, Kuwabara Y, Inada H, Wakimoto T, Nakada H, Yonemoto Y, Kawami S, Imai K 1994 Appl. Phys. Lett. 65 807
[80]	Park Y, Kim B, Lee C, Hyun A, Jang S, Lee J H, Gal Y S, Kim T H, Kim K S, Park J 2011 J. Phys. Chem. C 115 4843
[81]	Carter S A, Angelopoulos M, Karg S, Brock P J, Scott J C 1997 Appl. Phys. Lett. 70 2067
[82]	Choudhury K R, Lee J W, Chopra N, Gupta A, Jiang X Z, Amy F, So F 2009 Adv. Funct. Mater. 19 491
[83]	Hung L S, Zheng L R, Mason M G 2001 Appl. Phys. Lett. 78 673
[84]	Zhang X W, Wu Z X, Wang D W, Wang D D, He R L, Hou X 2010 Appl. Surf. Sci. 256 4468
[85]	Qiu C F, Chen H Y, Xie Z L, Wong M, Kwok H S 2002 Appl. Phys. Lett. 80 3485
[86]	Xie J, Zhang D Q, Wang L D, Duan L, Qiao J, Qiu Y 2006 Chin. Phys. Lett. 23 928
[87]	You H, Dai Y F, Zhang Z Q, Ma D G 2007 J. Appl. Phys. 101 026105
[88]	Jiang X Y, Zhang Z L, Cao J, Zhu W Q 2008 Solid State Electron. 52 952
[89]	Matsushima T, Jin G H, Murata H 2008 J. Appl. Phys. 104 054501
[90]	Kim Y H, Lee S H, Noh J, Han S H 2006 Thin Solid Films 510 305
[91]	Koller G, Winter B, Oehzelt M, Ivanco J, Netzer F P, Ramsey M G 2007 Org. Electron. 8 63
[92]	Tatsuo M, Shunsuke N, Takao N, Satoshi O 2008 Jpn. J. Appl. Phys. 47 455
[93]	Mori T, Imanishi M, Nishikawa T 2011 Appl. Phys. Express 4 071601
[94]	Tang C W, Vanslyke S A, Chen C H 1989 J. Appl. Phys. 65 3610
[95]	Shi J M, Tang C W 1997 Appl. Phys. Lett. 70 1665
[96]	Chu T Y, Chen J F, Chen S Y, Chen C J, Chen C H 2006 Appl. Phys. Lett. 89 053503
[97]	Jarikov V V, Kondakov D Y, Brown C T 2007 J. Appl. Phys. 102 104908
[98]	Bai Y, Khan M A, Zhu W Q, Jiang X Y, Zhang Z L 2008 Displays 29 365
[99]	Baldo M A, O'Brien D F, You Y, Shoustikov A, Sibley S, Thompson M E, Forrest S R 1998 Nature 395 151
[100]	D'Andrade B W, Forrest S R, Chwang A B 2003 Appl. Phys. Lett. 83 3858
[101]	Wellmann P, Hofmann M, Zeika O, Werner A, Birnstock J, Meerheim R, He G F, Walzer K, Pfeiffer M, Leo K 2005 J. Soc. Inf. Display 13 393
[102]	Kang J W, Lee D S, Park H D, Kim J W, Jeong W I, Park Y S, Lee S H, Go K, Lee J S, Kim J J 2008 Org. Electron. 9 452
[103]	Popovic Z D, Xie S, Hu N, Hor A, Fork D, Anderson G, Tripp C 2000 Thin Solid Films 363 6
[104]	Tsai C H, Liao C H, Lee M T, Chen C H 2005 Appl. Phys. Lett. 87 243505
[105]	Kim Y, Oh E, Lim H, Ha C S 2006 Appl. Phys. Lett. 88 043504
[106]	Hung L S, Tang C W, Mason M G 1997 Appl. Phys. Lett. 70 152
[107]	Zhang D Q, Li Y, Zhang G H, Gao Y D, Duan L, Wang L D, Qiu Y 2008 Appl. Phys. Lett. 92 073301
[108]	Kwon J H, Lee J Y 2009 Synth. Met. 159 1292
[109]	Lee J H, Ho Y H, Lin T C, Wu C F 2007 J. Electrochem. Soc. 154 J226
[110]	Birnstock J, Canzler T, Hofmann M, Lux A, Murano S, Wellmann P, Werner A 2008 J. Soc. Inf. Display 16 221
[111]	Wang D D, Wu Z X, Zhang X W, Jiao B, Wang D W, Hou X 2010 Chin. Sci. Bull. 55 986
[112]	Liu S W, Huang C A, Lee J H, Yang K H, Chen C C, Chang Y 2004 Thin Solid Films 453 312
[113]	Lee J H, Wu C I, Liu S W, Huang C A, Chang Y 2005 Appl. Phys. Lett. 86 103506
[114]	Tsai Y C, Jou J H 2006 Appl. Phys. Lett. 89 243521
[115]	Jarikov V V, Young R H, Vargas J R, Brown C T, Klubek K P, Liao L S 2006 J. Appl. Phys. 100 094907

Cited By

[1]	Tang C W, Vanslyke S A 1987 Appl. Phys. Lett. 51 913
[2]	Shen Z L, Burrows P E, Bulovic V, Forrest S R, Thompson M E 1997 Science 276 2009
[3]	McCarthy M A, Liu B, Donoghue E P, Kravchenko I, Kim D Y, So F, Rinzler A G 2011 Science 332 570
[4]	Helander M G, Wang Z B, Qiu J, Greiner M T, Puzzo D P, Liu Z W, Lu Z H 2011 Science 332 947
[5]	Sun Y R, Giebink N C, Kanno H, Ma B W, Thompson M E, Forrest S R 2006 Nature 440 908
[6]	Reineke S, Lindner F, Schwartz G, Seidler N, Walzer K, Lussem B, Leo K 2009 Nature 459 234
[7]	Muller C D, Falcou A, Reckefuss N, Rojahn M, Wiederhirn V, Rudati P, Frohne H, Nuyken O, Becker H, Meerholz K 2003 Nature 421 829
[8]	Han T H, Lee Y, Choi M R, Woo S H, Bae S H, Hong B H, Ahn J H, Lee T W 2012 Nat. Photonics 6 105
[9]	Krieg T, Petr A, Barkleit G, Dunsch L 1999 Appl. Phys. Lett. 74 3639
[10]	Mori T, Mitsuoka T, Ishii M, Fujikawa H, Taga Y 2002 Appl. Phys. Lett. 80 3895
[11]	Grozea D, Turak A, Yuan Y, Han S, Lu Z H, Kim W Y 2007 J. Appl. Phys. 101 033522
[12]	Aziz H, Xu G 1997 J. Phys. Chem. B 101 4009
[13]	Aziz H, Popovic Z, Tripp C P, Hu N X, Hor A M, Xu G 1998 Appl. Phys. Lett. 72 2642
[14]	Kim J S, Ho P K H, Murphy C E, Seeley A, Grizzi I, Burroughes J H, Friend R H 2004 Chem. Phys. Lett. 386 2
[15]	Ikeda T, Murata H, Kinoshita Y, Shike J, Ikeda Y, Kitano M 2006 Chem. Phys. Lett. 426 111
[16]	Lee J Y 2004 Chem. Phys. Lett. 393 260
[17]	Melpignano P, Baron-Toaldo A, Biondo V, Priante S, Zamboni R, Murgia M, Caria S, Gregoratti L, Barinov A, Kiskinova M 2005 Appl. Phys. Lett. 86 041105
[18]	Matsushima T, Murata H 2008 J. Appl. Phys. 104 034507
[19]	Wang Q, Luo Y C, Aziz H 2010 Appl. Phys. Lett. 97 063309
[20]	Wang Q, Aziz H 2011 Org. Electron. 12 1571
[21]	Li J, Sano T, Hirayama Y, Tomita T, Fujii H, Wakisaka K 2006 J. Appl. Phys. 100 034506
[22]	Aziz H, Luo Y C, Xu G, Popovic Z D 2006 Appl. Phys. Lett. 89 103515
[23]	Luo Y C, Aziz H, Xu G, Popovic Z D 2007 J. Appl. Phys. 101 054512
[24]	Choi S H, Lee T I, Baik H K, Roh H H, Kwon O, Suh D H 2008 Appl. Phys. Lett. 93 183301
[25]	Nenna G, Barra M, Cassinese A, Miscioscia R, Fasolino T, Tassini P, Minarini C, Della Sala D 2009 J. Appl. Phys. 105 123511
[26]	Tsai Y S, Wang S H, Chen C H, Cheng C L, Liao T C 2009 Appl. Phys. Lett. 95 233306
[27]	Chung S, Lee J H, Jeong J, Kim J J, Hong Y 2009 Appl. Phys. Lett. 94 253302
[28]	Aziz H, Popovic Z D 2004 Chem. Mater. 16 4522
[29]	Tak Y H, Kim K B, Park H G, Lee K H, Lee J R 2002 Thin Solid Films 411 12
[30]	Zhang X W, Wu Z X, Wang D D, Wang D W, Hou X 2009 Appl. Surf. Sci. 255 7970
[31]	Burrows P E, Bulovic V, Forrest S R, Sapochak L S, McCarty D M, Thompson M E 1994 Appl. Phys. Lett. 65 2922
[32]	Akande W O, Soboyejo W 2009 Appl. Phys. Lett. 95 113304
[33]	Schaer M, Nuesch F, Berner D, Leo W, Zuppiroli L 2001 Adv. Funct. Mater. 11 116
[34]	Jonda C, Mayer A B R, Stolz U, Elschner A, Karbach A 2000 J. Mater. Sci. 35 5645
[35]	McElvain J, Antoniadis H, Hueschen M R, Miller J N, Roitman D M, Sheats J R, Moon R L 1996 J. Appl. Phys. 80 6002
[36]	Savvateev V N, Yakimov A V, Davidov D, Pogreb R M, Neumann R, Avny Y 1997 Appl. Phys. Lett. 71 3344
[37]	Park J S, Chae H, Chung H K, Lee S I 2011 Semicond. Sci. Technol. 26 034001
[38]	Ishii M, Taga Y 2002 Appl. Phys. Lett. 80 3430
[39]	So F, Kondakov D 2010 Adv. Mater. 22 3762
[40]	Xu M S, Xu J B, Chen H Z, Wang M 2004 J. Phys. D: Appl. Phys. 37 2618
[41]	Vestweber H, Riess W 1997 Synth. Met. 91 181
[42]	Lee S T, Gao Z Q, Hung L S 1999 Appl. Phys. Lett. 75 1404
[43]	Suh M C, Chung H K, Kim S Y, Kwon J H, Chin B D 2005 Chem. Phys. Lett. 413 205
[44]	Luo Y C, Aziz H, Popovic Z D, Xu G 2007 J. Appl. Phys. 101 034510
[45]	Aziz H, Popovic Z D, Hu N X, Hor A M, Xu G 1999 Science 283 1900
[46]	Kondakov D Y, Sandifer J R, Tang C W, Young R H 2003 J. Appl. Phys. 93 1108
[47]	Han E M, Do L M, Yamamoto N, Fujihira M 1996 Thin Solid Films 273 202
[48]	Lee Y J, Lee H, Byun Y, Song S, Kim J E, Eom D, Cha W, Park S S, Kim J, Kim H 2007 Thin Solid Films 515 5674
[49]	Aziz H, Popovic Z, Xie S, Hor A M, Hu N X, Tripp C, Xu G 1998 Appl. Phys. Lett. 72 756
[50]	Adachi C, Nagai K, Tamoto N 1995 Appl. Phys. Lett. 66 2679
[51]	Cui J, Huang Q L, Veinot J C G, Yan H, Wang Q W, Hutchison G R, Richter A G, Evmenenko G, Dutta P, Marks T J 2002 Langmuir 18 9958
[52]	Lee J, Sohn S, Yun H J, Shin H J 2008 Appl. Phys. Lett. 93 133310
[53]	Cumpston B H, Jensen K F 1996 Appl. Phys. Lett. 69 3941
[54]	Probst M, Haight R 1997 Appl. Phys. Lett. 70 1420
[55]	Anjos P N, Aziz H, Hu N X, Popovic Z D 2002 Org. Electron. 3 9
[56]	Luo Y C, Aziz H, Popovic Z D, Xu G 2006 J. Appl. Phys. 99 054508
[57]	Luo Y C, Aziz H, Xu G, Popovic Z D 2007 Chem. Mater. 19 2079
[58]	Popovic Z D, Aziz H, Hu N X, Ioannidis A, Anjos P N 2001 J. Appl. Phys. 89 4673
[59]	Shen J, Wang D, Langlois E, Barrow W A, Green P J, Tang C W, Shi J 2000 Synth. Met. 111 233
[60]	Matsumura M, Ito A, Miyamae Y 1999 Appl. Phys. Lett. 75 1042
[61]	Meerheim R, Walzer K, Pfeiffer M, Leo K 2006 Appl. Phys. Lett. 89 061111
[62]	van Slyke S A, Chen C H, Tang C W 1996 Appl. Phys. Lett. 69 2160
[63]	Hamada Y, Sano T, Shibata K, Kuroki K 1995 Jpn. J. Appl. Phys. 34 L824
[64]	Wang D D, Wu Z X, Zhang X W, Jiao B, Liang S X, Wang D W, He R L, Hou X 2010 Org. Electron. 11 641
[65]	Zhang X W, Wu Z X, Jiao B, Wang D D, Wang D W, Hou X, Huang W 2012 J. Lumin 132 697
[66]	Wang D D, Wu Z X, Zhang X W, Wang D W, Hou X 2010 J. Lumin 130 321
[67]	Kim J S, Granstrom M, Friend R H, Johansson N, Salaneck W R, Daik R, Feast W J, Cacialli F 1998 J. Appl. Phys. 84 6859
[68]	Wu C C, Wu C I, Sturm J C, Kahn A 1997 Appl. Phys. Lett. 70 1348
[69]	Lu H T, Yokoyama M 2004 J. Cryst. Growth 260 186
[70]	Ho J J 2003 Electron. Lett. 39 458
[71]	Yu H Y, Feng X D, Grozea D, Lu Z H, Sodhi R N S, Hor A M, Aziz H 2001 Appl. Phys. Lett. 78 2595
[72]	Chan I M, Cheng W C, Hong F C 2002 Appl. Phys. Lett. 80 13
[73]	Choi B, Yoon H, Lee H H 2000 Appl. Phys. Lett. 76 412
[74]	Mason M G, Hung L S, Tang C W, Lee S T, Wong K W, Wang M 1999 J. Appl. Phys. 86 1688
[75]	Qiu Y, Zhang D Q, Wang L D, Wu G S 2001 Synth. Met. 125 415
[76]	Nuesch F, Rothberg L J, Forsythe E W, Le Q T, Gao Y L 1999 Appl. Phys. Lett. 74 880
[77]	Wang J, Lu L, Jiang W L, Zhang Y F, Zhao Y, Hou J Y, Liu S Y 2005 Chin. Phys. Lett. 22 727
[78]	Sharma A, Kippelen B, Hotchkiss P J, Marder S R 2008 Appl. Phys. Lett. 93 163308
[79]	Shirota Y, Kuwabara Y, Inada H, Wakimoto T, Nakada H, Yonemoto Y, Kawami S, Imai K 1994 Appl. Phys. Lett. 65 807
[80]	Park Y, Kim B, Lee C, Hyun A, Jang S, Lee J H, Gal Y S, Kim T H, Kim K S, Park J 2011 J. Phys. Chem. C 115 4843
[81]	Carter S A, Angelopoulos M, Karg S, Brock P J, Scott J C 1997 Appl. Phys. Lett. 70 2067
[82]	Choudhury K R, Lee J W, Chopra N, Gupta A, Jiang X Z, Amy F, So F 2009 Adv. Funct. Mater. 19 491
[83]	Hung L S, Zheng L R, Mason M G 2001 Appl. Phys. Lett. 78 673
[84]	Zhang X W, Wu Z X, Wang D W, Wang D D, He R L, Hou X 2010 Appl. Surf. Sci. 256 4468
[85]	Qiu C F, Chen H Y, Xie Z L, Wong M, Kwok H S 2002 Appl. Phys. Lett. 80 3485
[86]	Xie J, Zhang D Q, Wang L D, Duan L, Qiao J, Qiu Y 2006 Chin. Phys. Lett. 23 928
[87]	You H, Dai Y F, Zhang Z Q, Ma D G 2007 J. Appl. Phys. 101 026105
[88]	Jiang X Y, Zhang Z L, Cao J, Zhu W Q 2008 Solid State Electron. 52 952
[89]	Matsushima T, Jin G H, Murata H 2008 J. Appl. Phys. 104 054501
[90]	Kim Y H, Lee S H, Noh J, Han S H 2006 Thin Solid Films 510 305
[91]	Koller G, Winter B, Oehzelt M, Ivanco J, Netzer F P, Ramsey M G 2007 Org. Electron. 8 63
[92]	Tatsuo M, Shunsuke N, Takao N, Satoshi O 2008 Jpn. J. Appl. Phys. 47 455
[93]	Mori T, Imanishi M, Nishikawa T 2011 Appl. Phys. Express 4 071601
[94]	Tang C W, Vanslyke S A, Chen C H 1989 J. Appl. Phys. 65 3610
[95]	Shi J M, Tang C W 1997 Appl. Phys. Lett. 70 1665
[96]	Chu T Y, Chen J F, Chen S Y, Chen C J, Chen C H 2006 Appl. Phys. Lett. 89 053503
[97]	Jarikov V V, Kondakov D Y, Brown C T 2007 J. Appl. Phys. 102 104908
[98]	Bai Y, Khan M A, Zhu W Q, Jiang X Y, Zhang Z L 2008 Displays 29 365
[99]	Baldo M A, O'Brien D F, You Y, Shoustikov A, Sibley S, Thompson M E, Forrest S R 1998 Nature 395 151
[100]	D'Andrade B W, Forrest S R, Chwang A B 2003 Appl. Phys. Lett. 83 3858
[101]	Wellmann P, Hofmann M, Zeika O, Werner A, Birnstock J, Meerheim R, He G F, Walzer K, Pfeiffer M, Leo K 2005 J. Soc. Inf. Display 13 393
[102]	Kang J W, Lee D S, Park H D, Kim J W, Jeong W I, Park Y S, Lee S H, Go K, Lee J S, Kim J J 2008 Org. Electron. 9 452
[103]	Popovic Z D, Xie S, Hu N, Hor A, Fork D, Anderson G, Tripp C 2000 Thin Solid Films 363 6
[104]	Tsai C H, Liao C H, Lee M T, Chen C H 2005 Appl. Phys. Lett. 87 243505
[105]	Kim Y, Oh E, Lim H, Ha C S 2006 Appl. Phys. Lett. 88 043504
[106]	Hung L S, Tang C W, Mason M G 1997 Appl. Phys. Lett. 70 152
[107]	Zhang D Q, Li Y, Zhang G H, Gao Y D, Duan L, Wang L D, Qiu Y 2008 Appl. Phys. Lett. 92 073301
[108]	Kwon J H, Lee J Y 2009 Synth. Met. 159 1292
[109]	Lee J H, Ho Y H, Lin T C, Wu C F 2007 J. Electrochem. Soc. 154 J226
[110]	Birnstock J, Canzler T, Hofmann M, Lux A, Murano S, Wellmann P, Werner A 2008 J. Soc. Inf. Display 16 221
[111]	Wang D D, Wu Z X, Zhang X W, Jiao B, Wang D W, Hou X 2010 Chin. Sci. Bull. 55 986
[112]	Liu S W, Huang C A, Lee J H, Yang K H, Chen C C, Chang Y 2004 Thin Solid Films 453 312
[113]	Lee J H, Wu C I, Liu S W, Huang C A, Chang Y 2005 Appl. Phys. Lett. 86 103506
[114]	Tsai Y C, Jou J H 2006 Appl. Phys. Lett. 89 243521
[115]	Jarikov V V, Young R H, Vargas J R, Brown C T, Klubek K P, Liao L S 2006 J. Appl. Phys. 100 094907

[1]	Wang Jing, Gao Shan, Duan Xiang-Mei, Yin Wan-Jian. Influence of defect in perovskite solar cell materials on device performance and stability. Acta Physica Sinica, 2024, 73(6): 063101. doi: 10.7498/aps.73.20231631
[2]	Yan Jia-Hao, Chen Si-Xuan, Yang Jian-Bin, Dong Jing-Jing. Improving efficiency and stability of organic-inorganic hybrid perovskite solar cells by absorption layer ion doping. Acta Physica Sinica, 2021, 70(20): 206801. doi: 10.7498/aps.70.20210836
[3]	Xu Chong, Niu Lian-Bin, Qian Ya-Cui, Wen Lin, Xiong Yuan-Qiang, Peng Hao-Nan, Guan Yun-Xia. Research on Fe(NH₂trz)₃·(BF₄)₂ doped polyfluorene organic light-emitting devices. Acta Physica Sinica, 2021, 70(7): 077202. doi: 10.7498/aps.70.20201444
[4]	Fan Qin-Hua, Zu Yan-Qing, Li Lu, Dai Jin-Fei, Wu Zhao-Xin. Research progress of stability of luminous lead halide perovskite nanocrystals. Acta Physica Sinica, 2020, 69(11): 118501. doi: 10.7498/aps.69.20191767
[5]	Tao Hong, Gao Dong-Yu, Liu Bai-Quan, Wang Lei, Zou Jian-Hua, Xu Miao, Peng Jun-Biao. Enhancement of tandem organic light-emitting diode performance by inserting an ultra-thin Ag layer in charge generation layer. Acta Physica Sinica, 2017, 66(1): 017302. doi: 10.7498/aps.66.017302
[6]	Sun Kai, He Zhi-Qun, Liang Chun-Jun. Effect of multiple temperature-step annealing on the performances of polymer solar cells. Acta Physica Sinica, 2014, 63(4): 048801. doi: 10.7498/aps.63.048801
[7]	Wang Chao, Liu Cheng-Yuan, Hu Yuan-Ping, Liu Zhi-Hong, Ma Jian-Feng. Stability of information spreading over social network. Acta Physica Sinica, 2014, 63(18): 180501. doi: 10.7498/aps.63.180501
[8]	Li Xiu-Ping, Wang Shan-Jin, Chen Qiong, Luo Shi-Yu. Parametric excitation and stability of crystalline undulator radiation. Acta Physica Sinica, 2013, 62(22): 224102. doi: 10.7498/aps.62.224102
[9]	Wang Can-Jun, Li Jiang-Cheng, Mei Dong-Cheng. Effect of noises on the stability of a metapopulation. Acta Physica Sinica, 2012, 61(12): 120506. doi: 10.7498/aps.61.120506
[10]	Zhang Juan, Zhou Zhi-Gang, Shi Yu-Ren, Yang Hong-Juan, Duan Wen-Shan. The stability of solitay wave solution to a modified Kadomtsev-Petviashvili equation. Acta Physica Sinica, 2012, 61(13): 130401. doi: 10.7498/aps.61.130401
[11]	Chen Ping, Zhao Li, Duan Yu, Cheng Gang, Zhao Yi, Liu Shi-Yong. A novel charge generation layer for stacked organic light-emitting devices. Acta Physica Sinica, 2011, 60(9): 097203. doi: 10.7498/aps.60.097203
[12]	Qiao Shi-Zhu, Zhao Jun-Qing, Jia Zhen-Feng, Zhang Ning-Yu, Wang Feng-Xiang, Fu Gang, Ji Yan-Ju. Formation and manipulation of singlet and triplet in spin-polarized organic light-emitting devices. Acta Physica Sinica, 2010, 59(5): 3564-3570. doi: 10.7498/aps.59.3564
[13]	Wen Wen, Wang Bo, Li Lu, Yu Jun-Sheng, Jiang Ya-Dong. High performance white organic light-emitting devices based on a novel red fluorescent dye 3-(dicyanomethylene)-5, 5-dimethyl-1-(4-dimethylamino-styryl) cyclohexene. Acta Physica Sinica, 2009, 58(11): 8014-8020. doi: 10.7498/aps.58.8014
[14]	Niu Lian-Bin, Guan Yun-Xia. Fullerene-doped hole transport NPB layer in organic light-emitting devices. Acta Physica Sinica, 2009, 58(7): 4931-4935. doi: 10.7498/aps.58.4931
[15]	Chen Huan-Ting, Lü Yi-Jun, Chen Zhong, Zhang Hai-Bing, Gao Yu-Lin, Chen Guo-Long. Analysis of degradation mechanism of GaN blue light emitting diode by the characteristics of capacitance and conductance. Acta Physica Sinica, 2009, 58(8): 5700-5704. doi: 10.7498/aps.58.5700
[16]	Ouyang Yu, Peng Jing-Cui, Wang　Hui, Yi Shuang-Ping. Study on the stability of carbon nanotubes. Acta Physica Sinica, 2008, 57(1): 615-620. doi: 10.7498/aps.57.615
[17]	Tang Xiao-Qing, Yu Jun-Sheng, Li Lu, Wang Jun, Jiang Ya-Dong. Electroluminescence of an iridium complex phosphorescent material doped polymeric system. Acta Physica Sinica, 2008, 57(10): 6620-6626. doi: 10.7498/aps.57.6620
[18]	Wang Yan, Han Xiao-Yan, Ren Hui-Zhi, Hou Guo-Fu, Guo Qun-Chao, Zhu Feng, Zhang De-Kun, Sun Jian, Xue Jun-Ming, Zhao Ying, Geng Xin-Hua. Stability of mixed phase silicon thin film material under light soaking. Acta Physica Sinica, 2006, 55(2): 947-951. doi: 10.7498/aps.55.947
[19]	Zhang Kai, Feng Jun. Symmetry and stability of a relativistic birkhoff system. Acta Physica Sinica, 2005, 54(7): 2985-2989. doi: 10.7498/aps.54.2985
[20]	Ouyang Shi-Gen, Jiang De-Sheng, She Wei-Long. Stability of photovotaic spatial soliton with two-wavelength components. Acta Physica Sinica, 2004, 53(9): 3033-3041. doi: 10.7498/aps.53.3033

Catalog

Vol. 61, Issue 20 - 2012-10-20

Metrics

Abstract views: 6367
PDF Downloads: 848
Cited By: 0

姓名
邮箱
手机号码
标题
留言内容
验证码

Search

Article

留言板