Search

Article

x

留言板

尊敬的读者、作者、审稿人, 关于本刊的投稿、审稿、编辑和出版的任何问题, 您可以本页添加留言。我们将尽快给您答复。谢谢您的支持!

姓名
邮箱
手机号码
标题
留言内容
验证码

Ge and Nb co-doped TiO2 films with narrow band gap and low resistivity prepared by sputtering

Luo Xiao-Dong Di Guo-Qing

Citation:

Ge and Nb co-doped TiO2 films with narrow band gap and low resistivity prepared by sputtering

Luo Xiao-Dong, Di Guo-Qing
PDF
Get Citation

(PLEASE TRANSLATE TO ENGLISH

BY GOOGLE TRANSLATE IF NEEDED.)

  • Ge and Nb co-doped anatase TiO2 films are prepared by using radio frequency magnetron sputtering. The structures, resistivities and band gap properties of the films, which depend on Ge and Nb doping amounts, sputtering power and annealing temperature, are discussed. It is found that the band gap and resistivity of TiO2 film can be simultaneously tailored by co-doping with Ge and Nb. With doping volume fractions of 6% Nb and 20% Ge, the resistivity of the film can be reduced from 104 Ω/cm to 10-1 Ω/cm, and the band gap from 3.2 eV to 1.9 eV. After annealing, the Ge and Nb co-doped TiO2 film shows not only a lower resistivity but also a stronger absorption for visible and infrared light. As a result, Ge and Nb co-doped TiO2 film with adjustable band gap and resistivity can be prepared with magnetron sputtering by choosing proper Ge and Nb doping amounts and annealing conditions.
    • Funds: Project supported by the Basic Research Program of Jiangsu Province, China (Grant No. 05KJA43006).
    [1]

    Bach U, Lupo D, Comte P, Moser J E, Weissörtel F, Salbeck J, Spreitzer H, Grätzel M 1998 Nature 395 583

    [2]

    O'Hayre R, Nanu M, Schoonman J, Goossens A, Wang Q, Grätzel M 2006 Adv. Funct. Mater. 16 1566

    [3]

    Lin H, Huang C P, Li W, Ni C, Ismat Shah S, Tseng Y H 2006 Appl. Catal. B: Environ. 68 1

    [4]

    Albertin K F, Pereyra I 2009 Thin Solid Films 517 4548

    [5]

    Kurtz S R, Gordon R G 1997 Thin Solid Films 147 167

    [6]

    Cui Y F, Yuan Z H Acta Phys. Sin. 55 5127 (in Chinese) [崔永锋, 袁志好 2006 物理学报 55 5127]

    [7]

    Bu J L, Jiang Z Y, Jiao S H 2012 Adv. Mater. Res. 415-417 2036

    [8]

    Mwabora J M, Lindgren T, Avendano E, Jaramillo T F, Lu J, Lindquist S E, Granqvist C 2004 J. Phys. Chem. B 108 20193

    [9]

    Umebayashi T, Yamaki T, Itoh H, Asai K 2002 Appl. Phys. Lett. 81 454

    [10]

    Sakthivel S, Kisch H 2003 Angew. Chem. Int. Ed. 42 4908

    [11]

    Wu X W, Wu D J, Liu X J 2010 Acta Phys. Sin. 59 4788 (in Chinese) [吴雪炜, 吴大建, 刘晓峻 2010 物理学报 59 4788]

    [12]

    Zhang Y, Tang C Q, Dai J 2005 Acta Phys. Sin. 54 323 (in Chinese) [张勇, 唐超群, 戴君 2005 物理学报 54 323]

    [13]

    Chatterjee S, Goyal A, Ismat Shah S 2006 Mater. Lett. 60 3541

    [14]

    Chatterjee S 2008 Solar Energy 82 95

    [15]

    Gai Y Q, Li J B, Li S S, Xia J B, Wei S H 2009 Phys. Rev. Lett. 102 36402

    [16]

    Zhang X J, Gao P, Liu Q J 2010 Acta Phys. Sin. 59 4930 (in Chinese) [张学军, 高攀, 柳清菊 2010 物理学报 59 4930]

    [17]

    Luo H, Takata T, Lee Y, Zhao J F, Domen K, Yan Y S 2004 Chem. Mater. 16 846

    [18]

    Furubayashi Y, Hitosugi T, Yamamoto Y, Inana K, Kinoda G, Hirose Y, Shimada T, Hasegawa T 2005 Appl. Phys. Lett. 86 252101

    [19]

    Hitosugi T, Yamada N, Nakao S, Kirose Y, hasegawa T 2010 Phys. Status Solidi A 207 1529

    [20]

    Liu G A, Yang G J, Zheng F S 2007 Chin. J. Vacuum Sci. Technol. 27 254 (in Chinese) [刘贵昴, 杨贵进, 郑妃盛 2007 真空科学与技术学报 27 254]

    [21]

    Ghosh T B, Dhabal S, Datta A K 2003 J. Appl. Phys. 94 4577

    [22]

    Guo M L, Zhang X D, Liang C T 2011 Physica B: Condensed Matter 406 3354

    [23]

    Tang H, Prasad K, Sanjines R, Schmid P E, Levy F 1994 J. Appl. Phys. 75 1994

    [24]

    Sato Y, Akizuki H, Kamiyama T, Shigesato Y 2008 Thin Solid Films 516 5758

    [25]

    Hitosugi T, Kamisaka H, Yamashita K, Nogawa H, Furubayashi Y, Nakao S, Yamada N, Chikamatsu A, Kumigashira H, Oshima M, Hirose Y, Shimada T, Hasegawa T 2008 Appl. Phys. Express 1 111203

    [26]

    Hamberg I, Granqvist C G 1986 J. Appl. Phys. 60 123

    [27]

    Hitosugi T, Yamada N, Nakao S, Hirose Y, Hasegawa T 2010 Phys. Status Solidi A 207 1529

    [28]

    Khan A F, Mehmood M, Aslam M, Ismat Shah S 2010 J. Colloid Interf. Sci. 343 271

    [29]

    Tang H, Prasad, Sanjines R, Schmid P, Levy F 1994 J. Appl. Phys. 75 2042

  • [1]

    Bach U, Lupo D, Comte P, Moser J E, Weissörtel F, Salbeck J, Spreitzer H, Grätzel M 1998 Nature 395 583

    [2]

    O'Hayre R, Nanu M, Schoonman J, Goossens A, Wang Q, Grätzel M 2006 Adv. Funct. Mater. 16 1566

    [3]

    Lin H, Huang C P, Li W, Ni C, Ismat Shah S, Tseng Y H 2006 Appl. Catal. B: Environ. 68 1

    [4]

    Albertin K F, Pereyra I 2009 Thin Solid Films 517 4548

    [5]

    Kurtz S R, Gordon R G 1997 Thin Solid Films 147 167

    [6]

    Cui Y F, Yuan Z H Acta Phys. Sin. 55 5127 (in Chinese) [崔永锋, 袁志好 2006 物理学报 55 5127]

    [7]

    Bu J L, Jiang Z Y, Jiao S H 2012 Adv. Mater. Res. 415-417 2036

    [8]

    Mwabora J M, Lindgren T, Avendano E, Jaramillo T F, Lu J, Lindquist S E, Granqvist C 2004 J. Phys. Chem. B 108 20193

    [9]

    Umebayashi T, Yamaki T, Itoh H, Asai K 2002 Appl. Phys. Lett. 81 454

    [10]

    Sakthivel S, Kisch H 2003 Angew. Chem. Int. Ed. 42 4908

    [11]

    Wu X W, Wu D J, Liu X J 2010 Acta Phys. Sin. 59 4788 (in Chinese) [吴雪炜, 吴大建, 刘晓峻 2010 物理学报 59 4788]

    [12]

    Zhang Y, Tang C Q, Dai J 2005 Acta Phys. Sin. 54 323 (in Chinese) [张勇, 唐超群, 戴君 2005 物理学报 54 323]

    [13]

    Chatterjee S, Goyal A, Ismat Shah S 2006 Mater. Lett. 60 3541

    [14]

    Chatterjee S 2008 Solar Energy 82 95

    [15]

    Gai Y Q, Li J B, Li S S, Xia J B, Wei S H 2009 Phys. Rev. Lett. 102 36402

    [16]

    Zhang X J, Gao P, Liu Q J 2010 Acta Phys. Sin. 59 4930 (in Chinese) [张学军, 高攀, 柳清菊 2010 物理学报 59 4930]

    [17]

    Luo H, Takata T, Lee Y, Zhao J F, Domen K, Yan Y S 2004 Chem. Mater. 16 846

    [18]

    Furubayashi Y, Hitosugi T, Yamamoto Y, Inana K, Kinoda G, Hirose Y, Shimada T, Hasegawa T 2005 Appl. Phys. Lett. 86 252101

    [19]

    Hitosugi T, Yamada N, Nakao S, Kirose Y, hasegawa T 2010 Phys. Status Solidi A 207 1529

    [20]

    Liu G A, Yang G J, Zheng F S 2007 Chin. J. Vacuum Sci. Technol. 27 254 (in Chinese) [刘贵昴, 杨贵进, 郑妃盛 2007 真空科学与技术学报 27 254]

    [21]

    Ghosh T B, Dhabal S, Datta A K 2003 J. Appl. Phys. 94 4577

    [22]

    Guo M L, Zhang X D, Liang C T 2011 Physica B: Condensed Matter 406 3354

    [23]

    Tang H, Prasad K, Sanjines R, Schmid P E, Levy F 1994 J. Appl. Phys. 75 1994

    [24]

    Sato Y, Akizuki H, Kamiyama T, Shigesato Y 2008 Thin Solid Films 516 5758

    [25]

    Hitosugi T, Kamisaka H, Yamashita K, Nogawa H, Furubayashi Y, Nakao S, Yamada N, Chikamatsu A, Kumigashira H, Oshima M, Hirose Y, Shimada T, Hasegawa T 2008 Appl. Phys. Express 1 111203

    [26]

    Hamberg I, Granqvist C G 1986 J. Appl. Phys. 60 123

    [27]

    Hitosugi T, Yamada N, Nakao S, Hirose Y, Hasegawa T 2010 Phys. Status Solidi A 207 1529

    [28]

    Khan A F, Mehmood M, Aslam M, Ismat Shah S 2010 J. Colloid Interf. Sci. 343 271

    [29]

    Tang H, Prasad, Sanjines R, Schmid P, Levy F 1994 J. Appl. Phys. 75 2042

  • [1] Zhang Xin-Xin, Jin Ying-Xia, Ye Xiao-Song, Wang Chong, Yang Yu. Study on the annealing growth of Ge dots at high deposition rate by using magnetron sputtering technique. Acta Physica Sinica, 2014, 63(15): 156802. doi: 10.7498/aps.63.156802
    [2] Ma Hai-Lin, Su Qing. Effect of oxygen pressure on structure and optical band gap of gallium oxide thin films prepared by sputtering. Acta Physica Sinica, 2014, 63(11): 116701. doi: 10.7498/aps.63.116701
    [3] Tong Guo-Xiang, Li Yi, Wang Feng, Huang Yi-Ze, Fang Bao-Ying, Wang Xiao-Hua, Zhu Hui-Qun, Liang Qian, Yan Meng, Qin Yuan, Ding Jie, Chen Shao-Juan, Chen Jian-Kun, Zheng Hong-Zhu, Yuan Wen-Rui. Preparation of W-doped VO2/FTO composite thin films by DC magnetron sputtering and characterization analyses of the films. Acta Physica Sinica, 2013, 62(20): 208102. doi: 10.7498/aps.62.208102
    [4] Zhang Chuan-Jun, Wu Yun-Hua, Cao Hong, Gao Yan-Qing, Zhao Shou-Ren, Wang Shan-Li, Chu Jun-Hao. Effects of different substrates and CdCl2 treatment on the properties of CdS thin films deposited by magnetron sputtering. Acta Physica Sinica, 2013, 62(15): 158107. doi: 10.7498/aps.62.158107
    [5] Li Lin-Na, Chen Xin-Liang, Wang Fei, Sun Jian, Zhang De-Kun, Geng Xin-Hua, Zhao Ying. Effects of hydrogen flux on aluminum doped zinc thin films by pulsed magnetron sputtering. Acta Physica Sinica, 2011, 60(6): 067304. doi: 10.7498/aps.60.067304
    [6] Cao Yue-Hua, Di Guo-Qing. Analysis of Y2O3 doped TiO2 films topography prepared by radio frequency magnetron sputtering. Acta Physica Sinica, 2011, 60(3): 037702. doi: 10.7498/aps.60.037702
    [7] Di Guo-Qing. Surface morphology and optical properties of Ta2O5 films prepared by radio frequency sputtering. Acta Physica Sinica, 2011, 60(3): 038101. doi: 10.7498/aps.60.038101
    [8] Ding Wan-Yu, Xu Jun, Lu Wen-Qi, Deng Xin-Lu, Dong Chuang. An XPS study on the structure of SiNx film deposited by microwave ECR magnetron sputtering. Acta Physica Sinica, 2009, 58(6): 4109-4116. doi: 10.7498/aps.58.4109
    [9] Jia Lu, Xie Er-Qing, Pan Xiao-Jun, Zhang Zhen-Xing. Optical properties of amorphous GaN films deposited by sputtering. Acta Physica Sinica, 2009, 58(5): 3377-3382. doi: 10.7498/aps.58.3377
    [10] Deng Jin-Xiang, Wang Xu-Yang, Yao Qian, Zhou Tao, Zhang Xiao-Kang. Optical band gap of cubic boron nitride thin films deposited by sputtering. Acta Physica Sinica, 2008, 57(10): 6631-6635. doi: 10.7498/aps.57.6631
    [11] Xiao Jian-Rong, Xu Hui, Guo Ai-Min, Wang Huan-You. Study on FN-DLC thin films: (Ⅱ) effect of radio frequency power on the optical band gap of the thin films. Acta Physica Sinica, 2007, 56(3): 1809-1814. doi: 10.7498/aps.56.1809
    [12] Xiao Jian-Rong, Xu Hui, Li Yan-Feng, Li Ming-Jun. Effect of nitrogen pressure on structure and optical band gap of copper nitride thin films. Acta Physica Sinica, 2007, 56(7): 4169-4174. doi: 10.7498/aps.56.4169
    [13] Liang Li-Ping, Zhang Lei, Sheng Yong-Gang, Xu Yao, Wu Dong, Sun Yu-Han, Jiang Xiao-Dong, Wei Xiao-Feng. Studies on the laser-induced damage resistance of sol-gel derived ZrO2-TiO2 composite high refractive index films. Acta Physica Sinica, 2007, 56(6): 3596-3601. doi: 10.7498/aps.56.3596
    [14] Wang Yuan, Xu Ke-Wei. Cu-W Thin film characterized by surface fractal and resistivity. Acta Physica Sinica, 2004, 53(3): 900-904. doi: 10.7498/aps.53.900
    [15] . Acta Physica Sinica, 2002, 51(2): 406-409. doi: 10.7498/aps.51.406
    [16] Yang Hong-Shun, Li Peng-Cheng, Cai Yi-Sheng, Yu Min, Li Zhi-Quan, Yang Dong-Sheng, Zhang Liang, Wang Yu-Hong, Li Ming-De, Cao Lie-Zhao, Long Yun-Zhe, Chen Zhao-Jia. . Acta Physica Sinica, 2002, 51(3): 679-684. doi: 10.7498/aps.51.679
    [17] Ye Chao, Ning Zhao-Yuan, Cheng Shan-Hua, Wang Xiang-Ying. . Acta Physica Sinica, 2002, 51(11): 2640-2643. doi: 10.7498/aps.51.2640
    [18] Yang Shen-Dong, Ning Zhao-Yuan, Huang Feng, Cheng Shan-Hua, Ye Chao. . Acta Physica Sinica, 2002, 51(6): 1321-1325. doi: 10.7498/aps.51.1321
    [19] YANG HONG-SHUN, YU MIN, LI SHI-YAN, LI PENG-CHENG, CHAI YI SHENG, ZHANG LIANG, CHEN XIAN-HUI, CAO LIE-ZHAO. STUDY ON THE THERMOPOWER AND RESISTIVITY OF A NEW SUPERCONDUCTOR MgB2. Acta Physica Sinica, 2001, 50(6): 1197-1200. doi: 10.7498/aps.50.1197
    [20] LI HUI-LING, RUAN KE-QING, LI SHI-YAN, MO WEI-QIN, FAN RONG, LUO XI-GANG, CHEN XIAN-HUI, CAO LIE-ZHAO. STUDY ON THE RESISTIVITY AND HALL EFFECT OF MgB2 AND Mg0.93Li0.07B2. Acta Physica Sinica, 2001, 50(10): 2044-2048. doi: 10.7498/aps.50.2044
Metrics
  • Abstract views:  6060
  • PDF Downloads:  372
  • Cited By: 0
Publishing process
  • Received Date:  02 March 2012
  • Accepted Date:  08 May 2012
  • Published Online:  05 October 2012

/

返回文章
返回