Ge and Nb co-doped TiO<sub>2</sub> films with narrow band gap and low resistivity prepared by sputtering
Acta Physica Sinica
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Acta Phys. Sin  2012, Vol. 61 Issue (20): 206803     doi:10.7498/aps.61.206803
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Ge and Nb co-doped TiO2 films with narrow band gap and low resistivity prepared by sputtering
Luo Xiao-Dong, Di Guo-Qing
Jiangsu Key Labortory of Thin Films, Department of Physics, Soochow University, Suzhou 215006, China
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