Growth evolution of Ge quantum dot modulated by the atom bombardment during ion beam sputtering deposition
Acta Physica Sinica
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Acta Phys. Sin  2012, Vol. 61 Issue (21): 218101     doi:10.7498/aps.61.218101
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Growth evolution of Ge quantum dot modulated by the atom bombardment during ion beam sputtering deposition
Xiong Fei1, Yang Jie1, Zhang Hui2, Chen Gang1, Yang Pei-Zhi3
1. Research Institute of Engineering and Technology, Yunnan University, Kunming 650091, China;
2. Institute of Advanced Materials for Photo-Electronics, Kunming University of Science and Technology, Kunming 650093, China;
3. Key Laboratory of Education Ministry for Advance Technique and Preparation of Renewable Energy Materials, Yunnan Normal University, Kunming 650092, China
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