Study on high mobility In<sub>0.6</sub>Ga<sub>0.4</sub>As channel MOSHEMT and MOSFET
Acta Physica Sinica
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Acta Phys. Sin  2012, Vol. 61 Issue (21): 217304     doi:10.7498/aps.61.217304
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Current Issue| Archive| Adv Search  |   
Study on high mobility In0.6Ga0.4As channel MOSHEMT and MOSFET
Chang Hu-Dong1, Sun Bing1, Lu Li1, Zhao Wei1, Wang Sheng-Kai1, Wang Wen-Xin2, Liu Hong-Gang1
1. Microwave Device and IC Department, Institute of Microelectronics, Chines Academy of Sciences, Beijing 100029, China;
2. Institute of Physics, Chines Academy of Science, Beijing 100190, China
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