Magneto-resistance for two-dimensional electron gas in GaN/Al<sub><i>x</i></sub>Ga<sub>1-<i>x</i></sub>N heterostructure
Acta Physica Sinica
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Acta Phys. Sin.  2012, Vol. 61 Issue (23): 237302     doi:10.7498/aps.61.237302
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Current Issue| Archive| Adv Search  |   
Magneto-resistance for two-dimensional electron gas in GaN/AlxGa1-xN heterostructure
Wang Wei1 2, Zhou Wen-Zheng1 2 3, Wei Shang-Jiang1, Li Xiao-Juan1, Chang Zhi-Gang1, Lin Tie2, Shang Li-Yan3, Han Kui4, Duan Jun-Xi4, Tang Ning4, Shen Bo4, Chu Jun-Hao2 3
1. College of Physics Science and Technology, Guangxi University, Nanning 530004, China;
2. National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China;
3. Key Laboratory of Polar Materials and Devices, Ministry of Education, East China Normal University, Shanghai 200241, China;
4. State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
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