First principles calculation of electronic structure for Al-doped 3C-SiC and its microwave dielectric properties
Acta Physica Sinica
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Acta Phys. Sin.  2012, Vol. 61 Issue (23): 237103     doi:10.7498/aps.61.237103
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Current Issue| Archive| Adv Search  |   
First principles calculation of electronic structure for Al-doped 3C-SiC and its microwave dielectric properties
Li Zhi-Min1 2, Shi Jian-Zhang1, Wei Xiao-Hei1, Li Pei-Xian1, Huang Yun-Xia1, Li Gui-Fang1, Hao Yue2
1. School of Technical Physics, Xidian University, Xi'an 710071, China;
2. Key Laboratory of Wide Band-gap Semiconductor Materials & Devices, Xidian University, Xi'an 710071, China
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