Degradation mechanism of SOI NMOS devices exposed to <sup>60</sup>Co γ-ray at low dose rate
Acta Physica Sinica
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Acta Phys. Sin.  2012, Vol. 61 Issue (24): 246101     doi:10.7498/aps.61.246101
CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES Current Issue| Archive| Adv Search  |   
Degradation mechanism of SOI NMOS devices exposed to 60Co γ-ray at low dose rate
Shang Huai-Chao, Liu Hong-Xia, Zhuo Qing-Qing
Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Material and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China
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