退火工艺对LaTiON和HfLaON存储层金属-氧化物-氮化物-氧化物-硅存储器特性的影响

doi:10.7498/aps.62.038501

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Abstract Charge-trapping memory capacitor with LaTiON or HfLaON serving as charge storage layer is fabricated by reactive sputtering method, and influences of post-deposition annealing (PDA) in NH₃ or N₂ ambient on its memory characteristics are investigated. It is found that before PDA, the LaTiON sample exhibits better retention characteristic than the HfLaON sample, but the later shows larger memory window (4.8 V at +/-12 V/1 s), and after PDA, the NH₃-annealed sample has faster program/erase speed, better retention and endurance properties than the N₂-annealed sample, owing to nitridation role of NH₃. Furthermore, the HfLaON sample with PDA in NH₃achieves a large memory window of 3.8 V at +/-12 V/1 s, and also shows better retention and endurance properties than the LaTiON sample with PDA in NH₃.

Key words： MONOS memory LaTiON HfLaON annealing

Received: 27 June 2012

PACS:	85.30.De	(Semiconductor-device characterization, design, and modeling)
	73.40.Qv	(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))

Fund:Project supported by the National Natural Science Foundation of China (Grant No. 60976091).

Corresponding Authors: 徐静平 E-mail: jpxu@mail.hust.edu.cn

About author:: 85.30.De; 73.40.Qv

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	Zhu Jian-Yun
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Cite this article:

Zhu Jian-Yun,Liu Lu,Li Yu-Qiang et al.. Effect of annealing atmosphere on characteristics of MONOS with LaTiON or HfLaON as charge storage layer[J]. Acta Phys. Sin, 2013, 62(3): . doi:10.7498/aps.62.038501.

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http://wulixb.iphy.ac.cn/EN/10.7498/aps.62.038501 OR http://wulixb.iphy.ac.cn/EN/Y2013/V62/I3/38501

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