3D simulation of heavy ion induced charge collection of single event effects in SiGe heterojunction bipolar transistor
Acta Physica Sinica
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Acta Phys. Sin  2013, Vol. 62 Issue (4): 048501     doi:10.7498/aps.62.048501
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3D simulation of heavy ion induced charge collection of single event effects in SiGe heterojunction bipolar transistor
Zhang Jin-Xin1 2 4, Guo Hong-Xia1 2 3, Guo Qi1 2, Wen Lin1 2 4, Cui Jiang-Wei1 2, Xi Shan-Bin2, Wang Xin1 2 4, Deng Wei1 2 4
1. Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China;
2. Xinjiang Key Laboratory of Electronic Information Materials and Devices, Urumqi 830011, China;
3. Northwest Institution of Nuclear Technology, Xi’an 710024, China;
4. University of Chinese Academy of Sciences, Beijing 100049, China
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