Gas-sensing properties at room temperature for the sensors based on tungsten oxide thin films sputtered on n-type ordered porous silicon

Hu Ming; Liu Qing-Lin; Jia Ding-Li; Li Ming-Da

doi:10.7498/aps.62.057102

Abstract

n-type porous silicons are prepared by the electrochemical corrosion method, on which tungsten oxide thin films with different thickness values are sputtered using DC reactive magnetron sputtering. The structures of ordered porous silicons and tungsten oxide thin films are characterized using field emission scanning electron microscope, which show that the pores are pillared and ordered and the thin films cover the porous layer loosely with many pores open to ambient air. The X-ray diffraction characterization indicates that the lattice structure of tungsten oxide thin film is mainly triclinic polycrystalline. The gas-sensing properties at room temperature for both ordered porous silicon and composite structure are studied, which indicate that the latter is much more sensitive to nitrogen dioxide than the former. And there is a critical spurting time of WO3 thin film, which in our case is 10 min. The sensing mechanism of composite structure is discussed and the probable explanation for the improvement of sensitivity to NO2 is the formation of hetero-junctions between the ordered porous silicon layer and the WO3 thin film. In addition, there exists an inversion layer on the surface of the WO3 thin film, which causes the anomalous resistance to change during the gas sensing measurements.

Keywords:

ordered porous silicon /
tungsten oxide thin films /
nitrogen dioxide /
gas-sensing properties at room temperature

Authors and contacts

1.
School of Electronic Information Engineering, Tianjin University, Tianjin 300072, China
Funds: Project supported by the National Natural Science Foundation of China (Grant No. 60771019), and the Tianjin Key Research Program of Application Foundation and Advanced Technology, China (Grant No. 11JCZDJC15300).

References

[1]	Fine G F, Cavanagh L M, Afonja A, Binions R 2010 Sensors 10 5469
[2]	Kaur J, Roy S C, Bhatnagar M C 2007 Sens. Actuators B 123 1090
[3]	Choi Y J, Hwang I S, Park J G, Choi K J, Park J H, Lee J H 2008 Nanotechnology 19 095508
[4]	Baratto C, Sberveglieri G, Onischuk A, Caruso B, Stasio S D 2004 Sens. Actuators B 100 261
[5]	Cho P S, Kim K W, Lee J H 2006 J. Electroceram 17 975
[6]	Ahn M W, Park K S, Heo J H, Kim D W, Choi K J, Park J G 2009 Sens. Actuators B 138 168
[7]	Shen Y, Yamazaki T, Liu Z, Meng D, Kikuta T, Nakatani N 2009 Thin Solid Films 517 2069
[8]	Tamaki J, Hashishin T, Uno Y, Dao D V, Sugiyama S 2008 Sens. Actuators B 132 234
[9]	Zeng J, Hu M, Wang W, Chen H, Qin Y 2012 Sens. Actuators B 161 447
[10]	Hu M, Wang W D, Zeng J, Qin Y X 2011 Chin. Phys. B 20 102101
[11]	Qin Y X, Wang F, Shen W J, Hu M 2012 Acta Phys. Sin. 61 057301 (in Chinese) [秦玉香, 王飞, 沈万江, 胡明 2012 物理学报 61 057301]
[12]	Chen L, Bai S, Zhou G, Li D, Chen A, Liu C C 2008 Sens. Actuators B 134 360
[13]	Zhang C, Boudiba A, Olivier M G, Snyders R, Debliquy M 2011 Procedia Engineering 25 823
[14]	Srivastava S, Jain K, Singh V N, Singh S, Vijayan N, Dilawar N, Gupta G, Senguttuvan T D 2012 Nanotechnology 23 205501
[15]	Shimanoe K, Nishiyama A, Yuasa M, Kida T, Yamazoe N 2009 Procedia Chemistry 1 212
[16]	An S, Park S, Ko H, Lee C 2012 Appl. Phys. A 108 53
[17]	Cao B, Chen J, Tang X, Zhou W 2009 J. Mater. Chem. 19 2323
[18]	Meng D, Shaalan N M, Yamazaki T, Kikuta T 2012 Sens. Actuators B 169 113
[19]	Sun S B, Chang X T, Li Z J 2010 Mater. Res. Bull. 45 1075
[20]	Senguttuvan T D, Srivastava V, Tawal J, Mishra M, Srivastava S, Jain K 2010 Sens. Actuators B 150 384
[21]	Fang F, Kennedy J, Futter J, Hopf T, Markwitz A, Manikandan E, Henshaw G 2011 Nanotechnology 22 335702
[22]	Liu G Y, Tan X W, Yao J C, Wang Z, Xiong Z H 2008 Acta Phys. Sin. 57 514 (in Chinese) [刘光友, 谭兴文, 姚金才, 王振, 熊祖洪 2008 物理学报 57 514]
[23]	Ren P, Liu X B, Shi X H, Liu Y, Liu Y, Ding X M, Hou X Y, Liao T C, Xiong Z H 2005 Acta Phys. Sin. 54 416 (in Chinese) [任鹏, 刘小兵, 史向华, 柳玥, 柳毅, 丁训民, 侯晓远, 廖太长, 熊祖洪 2005 物理学报 54 416]
[24]	Chen H Q, Hu M, Zeng J, Wang W D 2012 Chin. Phys. B 21 058201
[25]	Zhang W, Vasconcelos E A, Uchida H, Katsube T, Nakatsubo T, Nishioka Y 2000 Sens. Actuators B 65 154
[26]	Baratto C, Sberveglieri G, Comini E, Faglia G, Benussi G, Ferrara V L, Quercia L, Francia G D, Guidi V, Vincenzi D, Boscarino D, Rigato V 2000 Sens. Actuators B 68 74
[27]	Boarino L, Baratto C, Geobaldo F, Amato G, Comini E, Rossi A M, Faglia G, Lérondel G, Sberveglieri G 2000 Mater. Sci. Eng. B 69 210
[28]	Boarino L, Rocchia M, Baratto C, Rossi A M, Garrone E, Borini S, Geobaldo F, Comini E, Faglia G, Sberveglieri G, Amato G 2000 Phys. Stat. Sol. A 182 465
[29]	Jane A, Dronov R, Hodges A, Voelcker N H 2009 Trends Biotechnol. 27 230
[30]	Anglin E J, Cheng L, Freeman W R, Sailor M J 2008 Adv. Drug Deliver. Rev. 60 1266
[31]	Jalkanen T, Tuura J, Mäkilä E, Salonen J 2010 Sens. Actuators B 147 100
[32]	Chen H Q, Hu M, Zeng J, Wang W D 2012 Chin. Phys. B 21 058201
[33]	Ozdemir S, Gole J L 2007 Curr. Opin. Solid State Mater. Sci. 11 92
[34]	Blackman C S, Correig X, Katko V, Mozalev A, Parkin I P, Alcubilla R, Trifonov T 2008 Mater. Lett. 62 4582
[35]	Kanungo J, Saha H, Basu S 2010 Sens. Actuators B 147 128
[36]	Dai F P, Lv S Y, Feng B X, Jiang S R, Chen C 2003 Acta Phys. Sin. 52 1003 (in Chinese) [代富平, 吕淑媛, 冯博学, 蒋生蕊, 陈冲 2003 物理学报 52 1003]
[37]	Vallejos S, Khatko V, Calderer J, Gracia I, Cané C, Llobet E, Correig X 2008 Sens. Actuators B 132 209
[38]	Ghimbeu C M, Lumbreras M, Siadat M, Schoonman J 2010 Mater. Sci. Semicond. Process. 13 1
[39]	Granitzer P, Rumpf K, Pölt P, Reichmann A, Krenn H 2007 Physica E 38 205
[40]	Ouyang H, Christophersen M, Viard R, Miller B L, Fauchet P M 2005 Adv. Funct. Mater. 15 1851
[41]	Sun F Y, Hu M, Sun P, Liu B, Zhang J 2010 Nanotechnology and Precision Engineering 8 156
[42]	Gurlo A, Bârsan N, Oprea A, Sahm M, Sahm T, Weimar U 2004 Appl. Phys. Lett. 85 2280
[43]	Qin Y, Sun X, Li X, Hu M 2012 Sens. Actuators B 162 244
[44]	Hao Q, Li L, Yin X, Liu S, Li Q, Wang T 2011 Mater. Sci. Eng. B 176 600
[45]	Oprea A, Bârsan N, Weimar U 2009 Sens. Actuators B 142 470
[46]	Zhang C, Debliquy M, Boudiba A, Liao H, Coddet C 2010 Sens. Actuators B 144 280
[47]	Wang J X, Sun X W, Yang Y, Wu C M L 2009 Nanotechnology 20 465501

Cited By

[1]	Fine G F, Cavanagh L M, Afonja A, Binions R 2010 Sensors 10 5469
[2]	Kaur J, Roy S C, Bhatnagar M C 2007 Sens. Actuators B 123 1090
[3]	Choi Y J, Hwang I S, Park J G, Choi K J, Park J H, Lee J H 2008 Nanotechnology 19 095508
[4]	Baratto C, Sberveglieri G, Onischuk A, Caruso B, Stasio S D 2004 Sens. Actuators B 100 261
[5]	Cho P S, Kim K W, Lee J H 2006 J. Electroceram 17 975
[6]	Ahn M W, Park K S, Heo J H, Kim D W, Choi K J, Park J G 2009 Sens. Actuators B 138 168
[7]	Shen Y, Yamazaki T, Liu Z, Meng D, Kikuta T, Nakatani N 2009 Thin Solid Films 517 2069
[8]	Tamaki J, Hashishin T, Uno Y, Dao D V, Sugiyama S 2008 Sens. Actuators B 132 234
[9]	Zeng J, Hu M, Wang W, Chen H, Qin Y 2012 Sens. Actuators B 161 447
[10]	Hu M, Wang W D, Zeng J, Qin Y X 2011 Chin. Phys. B 20 102101
[11]	Qin Y X, Wang F, Shen W J, Hu M 2012 Acta Phys. Sin. 61 057301 (in Chinese) [秦玉香, 王飞, 沈万江, 胡明 2012 物理学报 61 057301]
[12]	Chen L, Bai S, Zhou G, Li D, Chen A, Liu C C 2008 Sens. Actuators B 134 360
[13]	Zhang C, Boudiba A, Olivier M G, Snyders R, Debliquy M 2011 Procedia Engineering 25 823
[14]	Srivastava S, Jain K, Singh V N, Singh S, Vijayan N, Dilawar N, Gupta G, Senguttuvan T D 2012 Nanotechnology 23 205501
[15]	Shimanoe K, Nishiyama A, Yuasa M, Kida T, Yamazoe N 2009 Procedia Chemistry 1 212
[16]	An S, Park S, Ko H, Lee C 2012 Appl. Phys. A 108 53
[17]	Cao B, Chen J, Tang X, Zhou W 2009 J. Mater. Chem. 19 2323
[18]	Meng D, Shaalan N M, Yamazaki T, Kikuta T 2012 Sens. Actuators B 169 113
[19]	Sun S B, Chang X T, Li Z J 2010 Mater. Res. Bull. 45 1075
[20]	Senguttuvan T D, Srivastava V, Tawal J, Mishra M, Srivastava S, Jain K 2010 Sens. Actuators B 150 384
[21]	Fang F, Kennedy J, Futter J, Hopf T, Markwitz A, Manikandan E, Henshaw G 2011 Nanotechnology 22 335702
[22]	Liu G Y, Tan X W, Yao J C, Wang Z, Xiong Z H 2008 Acta Phys. Sin. 57 514 (in Chinese) [刘光友, 谭兴文, 姚金才, 王振, 熊祖洪 2008 物理学报 57 514]
[23]	Ren P, Liu X B, Shi X H, Liu Y, Liu Y, Ding X M, Hou X Y, Liao T C, Xiong Z H 2005 Acta Phys. Sin. 54 416 (in Chinese) [任鹏, 刘小兵, 史向华, 柳玥, 柳毅, 丁训民, 侯晓远, 廖太长, 熊祖洪 2005 物理学报 54 416]
[24]	Chen H Q, Hu M, Zeng J, Wang W D 2012 Chin. Phys. B 21 058201
[25]	Zhang W, Vasconcelos E A, Uchida H, Katsube T, Nakatsubo T, Nishioka Y 2000 Sens. Actuators B 65 154
[26]	Baratto C, Sberveglieri G, Comini E, Faglia G, Benussi G, Ferrara V L, Quercia L, Francia G D, Guidi V, Vincenzi D, Boscarino D, Rigato V 2000 Sens. Actuators B 68 74
[27]	Boarino L, Baratto C, Geobaldo F, Amato G, Comini E, Rossi A M, Faglia G, Lérondel G, Sberveglieri G 2000 Mater. Sci. Eng. B 69 210
[28]	Boarino L, Rocchia M, Baratto C, Rossi A M, Garrone E, Borini S, Geobaldo F, Comini E, Faglia G, Sberveglieri G, Amato G 2000 Phys. Stat. Sol. A 182 465
[29]	Jane A, Dronov R, Hodges A, Voelcker N H 2009 Trends Biotechnol. 27 230
[30]	Anglin E J, Cheng L, Freeman W R, Sailor M J 2008 Adv. Drug Deliver. Rev. 60 1266
[31]	Jalkanen T, Tuura J, Mäkilä E, Salonen J 2010 Sens. Actuators B 147 100
[32]	Chen H Q, Hu M, Zeng J, Wang W D 2012 Chin. Phys. B 21 058201
[33]	Ozdemir S, Gole J L 2007 Curr. Opin. Solid State Mater. Sci. 11 92
[34]	Blackman C S, Correig X, Katko V, Mozalev A, Parkin I P, Alcubilla R, Trifonov T 2008 Mater. Lett. 62 4582
[35]	Kanungo J, Saha H, Basu S 2010 Sens. Actuators B 147 128
[36]	Dai F P, Lv S Y, Feng B X, Jiang S R, Chen C 2003 Acta Phys. Sin. 52 1003 (in Chinese) [代富平, 吕淑媛, 冯博学, 蒋生蕊, 陈冲 2003 物理学报 52 1003]
[37]	Vallejos S, Khatko V, Calderer J, Gracia I, Cané C, Llobet E, Correig X 2008 Sens. Actuators B 132 209
[38]	Ghimbeu C M, Lumbreras M, Siadat M, Schoonman J 2010 Mater. Sci. Semicond. Process. 13 1
[39]	Granitzer P, Rumpf K, Pölt P, Reichmann A, Krenn H 2007 Physica E 38 205
[40]	Ouyang H, Christophersen M, Viard R, Miller B L, Fauchet P M 2005 Adv. Funct. Mater. 15 1851
[41]	Sun F Y, Hu M, Sun P, Liu B, Zhang J 2010 Nanotechnology and Precision Engineering 8 156
[42]	Gurlo A, Bârsan N, Oprea A, Sahm M, Sahm T, Weimar U 2004 Appl. Phys. Lett. 85 2280
[43]	Qin Y, Sun X, Li X, Hu M 2012 Sens. Actuators B 162 244
[44]	Hao Q, Li L, Yin X, Liu S, Li Q, Wang T 2011 Mater. Sci. Eng. B 176 600
[45]	Oprea A, Bârsan N, Weimar U 2009 Sens. Actuators B 142 470
[46]	Zhang C, Debliquy M, Boudiba A, Liao H, Coddet C 2010 Sens. Actuators B 144 280
[47]	Wang J X, Sun X W, Yang Y, Wu C M L 2009 Nanotechnology 20 465501

[1]	Shao Guang-Wei, Yu Rui, Fu Ting, Chen Nan-Liang, Liu Xiang-Yang. Growth behavior of WO₃crystal topological structure and its electrochromic properties. Acta Physica Sinica, 2022, 71(2): 028201. doi: 10.7498/aps.71.20211555
[2]	Cao Yuan, Tian Xing, Cheng Gang, Liu Kun, Wang Gui-Shi, Zhu Gong-Dong, Gao Xiao-Ming. NO₂ measurement using fiber coupled broadband LED source combining a Herriott multi-pass cell. Acta Physica Sinica, 2019, 68(16): 164201. doi: 10.7498/aps.68.20190243
[3]	Li Chuang, Cai Li, Li Wei-Wei, Xie Dan, Liu Bao-Jun, Xiang Lan, Yang Xiao-Kuo, Dong Dan-Na, Liu Jia-Hao, Li Cheng, Wei Bo. Adsorption of NO₂ by hydrazine hydrate-reduced graphene oxide. Acta Physica Sinica, 2019, 68(11): 118102. doi: 10.7498/aps.68.20182242
[4]	Shao Zi-Qiao, Bi Heng-Chang, Xie Xiao, Wan Neng, Sun Li-Tao. Photocatalytic activity of tungsten trioxide/silver oxide composite under visible light irradiation for methylene blue degradation. Acta Physica Sinica, 2018, 67(16): 167802. doi: 10.7498/aps.67.20180663
[5]	Zhao Bo-Shuo, Qiang Xiao-Yong, Qin Yue, Hu Ming. Tungsten oxide nanowire gas sensor preparation and P-type NO2 sensing properties at room temperature. Acta Physica Sinica, 2018, 67(5): 058101. doi: 10.7498/aps.67.20172236
[6]	Zhu Bing, Feng Hao. Electron scattering studies of NO2 radical using R-matrix method. Acta Physica Sinica, 2017, 66(24): 243401. doi: 10.7498/aps.66.243401
[7]	Zhang Wei-Yi, Hu Ming, Liu Xing, Li Na, Yan Wen-Jun. Synthesis and gas-sensing properties of the silicon nanowires/vanadium oxide nanorods composite. Acta Physica Sinica, 2016, 65(9): 090701. doi: 10.7498/aps.65.090701
[8]	Xing Lan-Jun, Chang Yong-Qin, Shao Chang-Jing, Wang Lin, Long Yi. Room temperature gas sensing property and sensing mechanism of Sn-doped ZnO thin film. Acta Physica Sinica, 2016, 65(9): 097302. doi: 10.7498/aps.65.097302
[9]	Fang Cheng, Wang Hong, Shi Si-Qi. Research progress of electrochromic performances of WO3. Acta Physica Sinica, 2016, 65(16): 168201. doi: 10.7498/aps.65.168201
[10]	Xiong Ying, Wen Qi-Ye, Tian Wei, Mao Qi, Chen Zhi, Yang Qing-Hui, Jing Yu-Lan. Researches on the electrical properties of vanadium oxide thin films on Si substrates. Acta Physica Sinica, 2015, 64(1): 017102. doi: 10.7498/aps.64.017102
[11]	Duan Jun, Qin Min, Fang Wu, Ling Liu-Yi, Hu Ren-Zhi, Lu Xue, Shen Lan-Lan, Wang Dan, Xie Pin-Hua, Liu Jian-Guo, Liu Wen-Qing. Incoherent broadband cavity enhanced absorption spectroscopy for measurements of atmospheric HONO. Acta Physica Sinica, 2015, 64(18): 180701. doi: 10.7498/aps.64.180701
[12]	Zhu Hong-Qiang, Feng Qing. Microscopic characteristics mechanism of optical gas sensing material rutile titanium dioxide (110) surface adsorption of CO molecules. Acta Physica Sinica, 2014, 63(13): 133101. doi: 10.7498/aps.63.133101
[13]	Yang Xin-Xin, Wei Xiao-Xu, Wang Jun-Zhuan, Shi Yi, Zheng You-Liao. Properties in vanadium dioxide thin film synthesized from V2O5 annealed in H2/Ar ambience. Acta Physica Sinica, 2013, 62(22): 227201. doi: 10.7498/aps.62.227201
[14]	Xue Jiang, Pan Feng-Ming, Pei Yu. Optoelectrical properties of tantalum-doped TiO2 thin films. Acta Physica Sinica, 2013, 62(15): 158103. doi: 10.7498/aps.62.158103
[15]	Qin Yu-Xiang, Wang Fei, Shen Wan-Jiang, Hu Ming. Room temperature NO2-sensing properties and mechanism of the sensors based on tungsten oxide nanowires/single-wall carbon nanotubes composites. Acta Physica Sinica, 2012, 61(5): 057301. doi: 10.7498/aps.61.057301
[16]	Yang Jie, Li Shu-Kui, Yan Li-Li, Wang Fu-Chi. Protective performance and protective mechanism of SiO2 aerogel under explosive loading. Acta Physica Sinica, 2010, 59(12): 8934-8940. doi: 10.7498/aps.59.8934
[17]	Wang Li-Xia, Li Jian-Ping, He Xiu-Li, Gao Xiao-Guang. Fabrication of vanadium dioxide films at low temperature and researches on properties of the films. Acta Physica Sinica, 2006, 55(6): 2846-2851. doi: 10.7498/aps.55.2846
[18]	Qian Lei, Teng Feng, Xu Zheng, Quan Shan-Yu, Liu De-Ang, Wang Yuan-Min, Wang Yong-Sheng, Xu Xu-Rong. Influence of doping with titania nanotubes on performance of polymer light-emitting diodes. Acta Physica Sinica, 2006, 55(2): 929-934. doi: 10.7498/aps.55.929
[19]	SHEN JUN, WANG JUE, WU XIANG. STUDY ON FRACTAL STRUCTURE OF POROUS SILICA:AEROGELS AND XEROGELS. Acta Physica Sinica, 1996, 45(9): 1501-1505. doi: 10.7498/aps.45.1501
[20]	Jia Jin-Feng, Wu Kai, Wang De-Zheng, Lv Si-Ye, Zhao Nu-Guang, Wu Si-Cheng. . Acta Physica Sinica, 1995, 44(2): 251-258. doi: 10.7498/aps.44.251

Catalog

Vol. 62, Issue 5 - 2013-03-05

Metrics

Abstract views: 5296
PDF Downloads: 859
Cited By: 0

姓名
邮箱
手机号码
标题
留言内容
验证码

Search

Article

留言板