Effect of doping on the photoluminescence of multilayer Ge quantum dots deposited on Si(001) substrate
Acta Physica Sinica
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Acta Phys. Sin  2013, Vol. 62 Issue (7): 076108     doi:10.7498/aps.62.076108
CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES Current Issue| Archive| Adv Search  |   
Effect of doping on the photoluminescence of multilayer Ge quantum dots deposited on Si(001) substrate
Liu Zhi, Li Ya-Ming, Xue Chun-Lai, Cheng Bu-Wen, Wang Qi-Ming
State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
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