Analytical I-V model and numerical analysis of single electron transistor

Su Li-Na; Gu Xiao-Feng; Qin Hua; Yan Da-Wei

doi:10.7498/aps.62.077301

Abstract

The analytical I-V model of single electron transistor has been established and simulated by combining the Monte Carlo method with the Master Equation method. Effects of gate voltage, drain voltage, temperature, and tunneling junction resistance on electrical characteristics of a single electron transistor are analyzed. Simulation results indicate that for the device with symmetrical tunneling junction structure, the Coulomb staircases shift with increasing gate voltage, and the Coulomb oscillation amplitude increases with increasing drain voltage, while the Coulomb gaps decrease. The Coulomb staircases and the Coulomb oscillation disappear gradually with increasing temperature. The Coulomb blockade effects become more significant when the resistance ratio of the two asymmetrical tunneling junctions increases.

Keywords:

Authors and contacts

1.
Key Laboratory of Advanced Process Control for Light Industry (Ministry of Education), Department of Electronic Engineering, Jiangnan University, Wuxi 214122, China;
2.
Key Laboratory of Nanodevices, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China
Funds: Project supported by the National Natural Science Foundation of China (Grant No. 11074280), the PAPD of Jiangsu Higher Education Institutions, and the Fundamental Research Funds for Central Universities (Grant Nos. JUSRP20914, JUSRP51323B, JUDCF12031, JUDCF12032), and the Natural Science Foundation of Jiangsu (Grant No. BK2012110).

References

[1]	Likharev K K 1999 P. IEEE 87 606
[2]	Sui B C, Fang L, Zhang C 2011 Acta Phys. Sin. 60 077302 (in Chinese) [隋兵才, 方粮, 张超 2011 物理学报 60 077302]
[3]	Lui Y X, Wang Y C, Du S Y 2004 Acta Phys. Sin. 53 2734 (in Chinese) [刘彦欣, 王永昌, 杜少毅 2004 物理学报 53 2734]
[4]	Wu F, Wang T H 2002 Acta Phys. Sin. 51 2829 (in Chinese) [吴凡, 王太宏 2002 物理学报 51 2829]
[5]	Wang W, Liu M, Hsu A 2006 J. Comput. Sci. Technol. 21 871
[6]	Ali D, Ahmed H 1994 Appl. Phys. Lett. 64 2119
[7]	Wasshuber C 2001 Computational Single Electronics (New York: Springer) p9
[8]	Likharev K K 1988 IBM J. Res. Dev. 32 144
[9]	Wasshuber C, Kosina H, Selberherr S 1997 IEEE T. Comput. Aid D 16 937
[10]	Choi B H, Hwang S W, Kim I G, Shin H C, Kim Y, Kim E K 1998 Appl. Phys. Lett. 73 3129
[11]	Zhuang L, Guo L. Chou S Y 1998 Appl. Phys. Lett. 72 1205
[12]	Tilke A, Pescini L, Blick R H, Lorenz H, Kotthaus J P 2000 Prog. Mater. Sci. 71 357

Cited By

[1]	Likharev K K 1999 P. IEEE 87 606
[2]	Sui B C, Fang L, Zhang C 2011 Acta Phys. Sin. 60 077302 (in Chinese) [隋兵才, 方粮, 张超 2011 物理学报 60 077302]
[3]	Lui Y X, Wang Y C, Du S Y 2004 Acta Phys. Sin. 53 2734 (in Chinese) [刘彦欣, 王永昌, 杜少毅 2004 物理学报 53 2734]
[4]	Wu F, Wang T H 2002 Acta Phys. Sin. 51 2829 (in Chinese) [吴凡, 王太宏 2002 物理学报 51 2829]
[5]	Wang W, Liu M, Hsu A 2006 J. Comput. Sci. Technol. 21 871
[6]	Ali D, Ahmed H 1994 Appl. Phys. Lett. 64 2119
[7]	Wasshuber C 2001 Computational Single Electronics (New York: Springer) p9
[8]	Likharev K K 1988 IBM J. Res. Dev. 32 144
[9]	Wasshuber C, Kosina H, Selberherr S 1997 IEEE T. Comput. Aid D 16 937
[10]	Choi B H, Hwang S W, Kim I G, Shin H C, Kim Y, Kim E K 1998 Appl. Phys. Lett. 73 3129
[11]	Zhuang L, Guo L. Chou S Y 1998 Appl. Phys. Lett. 72 1205
[12]	Tilke A, Pescini L, Blick R H, Lorenz H, Kotthaus J P 2000 Prog. Mater. Sci. 71 357

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