Effects of bottom electrode on resistive switching characteristics of ZnO films
Acta Physica Sinica
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Acta Phys. Sin  2013, Vol. 62 Issue (7): 077202     doi:10.7498/aps.62.077202
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Current Issue| Archive| Adv Search  |   
Effects of bottom electrode on resistive switching characteristics of ZnO films
Li Hong-Xia1, Chen Xue-Ping1, Chen Qi1, Mao Qi-Nan1, Xi Jun-Hua1, Ji Zhen-Guo1 2
1. Laboratory of Electronic Materials and Devices, Hangzhou Dianzi University, Hangzhou 310018, China;
2. State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310013, China
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