-
We have anelyzed the displacement damage effects on quantum dot lasers theoretically and deduced the relation between the radiation-induced threshold current change and the neutron fluence. The neutron radiation experiment for quantum dot lasers are also carried out to examine the displacement damage coefficient of the non-radioactive recombination rate. The formula fits the experimental data very well, and can describe the trend of the laser performance under electron irradiation. It can also predict the behavior of quantum dot lasers under radiation environment and is valuable for practical application.
-
Keywords:
- quantum dot lasers /
- displacement effects /
- defects
[1] Biswas A, Boroson D, Edwards B 2006 Proc. of SPIE. 6105 610502-1
[2] Ustinov V M, Zhukov A E, Egorov A Y 2003 Quantum Dot Lasers (New York: Oxford) pp 29-62
[3] Fredrickson A R 1996 IEEE Trans. on Nucl. Science 43 426
[4] Esko M 2008 Ph. D. Dissertation (Tucson: The University of Arizona) pp44-53
[5] Vette J I 1991 Greenbelt: National Space Science Data Center 15
[6] Kim J H 2006 Ph. D. Dissertation (Seoul: Seoul National University) pp72-98
[7] Mi M T 2006 Ph. D. Dissertation (Ann Arbor: University of Michigan) pp63-113
[8] Shi B 2006 Ph. D. Dissertation (Los Angels: University of California) pp 52
[9] Asryan L V, Luryi Serge 2004 IEEE Journal of Quantum Electronics 40 833
[10] Asryan L V, Suris R 2002 International Journal of High Speed Electronics and Systems 12 117
[11] Smowton P M, Herrmann E, Ning Y 2001 Appl. Phys. Lett. 78 2629
[12] Jorio A, Rejeb C, Parenteau M 1993 J. Appl. Phys. 74 2310
[13] Hu Y L, Wang L, Chen Z X 1990 Chinese Journal of Semiconductors 11 889 (in Chinese) [胡雨生, 汪乐, 陈正秀 1990 半导体学报 11 889]
[14] Manasreh O 2005 Semiconductor Heterojunctions and Nanostructures (New York: McGraw-Hill) pp509-511
-
[1] Biswas A, Boroson D, Edwards B 2006 Proc. of SPIE. 6105 610502-1
[2] Ustinov V M, Zhukov A E, Egorov A Y 2003 Quantum Dot Lasers (New York: Oxford) pp 29-62
[3] Fredrickson A R 1996 IEEE Trans. on Nucl. Science 43 426
[4] Esko M 2008 Ph. D. Dissertation (Tucson: The University of Arizona) pp44-53
[5] Vette J I 1991 Greenbelt: National Space Science Data Center 15
[6] Kim J H 2006 Ph. D. Dissertation (Seoul: Seoul National University) pp72-98
[7] Mi M T 2006 Ph. D. Dissertation (Ann Arbor: University of Michigan) pp63-113
[8] Shi B 2006 Ph. D. Dissertation (Los Angels: University of California) pp 52
[9] Asryan L V, Luryi Serge 2004 IEEE Journal of Quantum Electronics 40 833
[10] Asryan L V, Suris R 2002 International Journal of High Speed Electronics and Systems 12 117
[11] Smowton P M, Herrmann E, Ning Y 2001 Appl. Phys. Lett. 78 2629
[12] Jorio A, Rejeb C, Parenteau M 1993 J. Appl. Phys. 74 2310
[13] Hu Y L, Wang L, Chen Z X 1990 Chinese Journal of Semiconductors 11 889 (in Chinese) [胡雨生, 汪乐, 陈正秀 1990 半导体学报 11 889]
[14] Manasreh O 2005 Semiconductor Heterojunctions and Nanostructures (New York: McGraw-Hill) pp509-511
Catalog
Metrics
- Abstract views: 6209
- PDF Downloads: 539
- Cited By: 0
下载:
