The influence of bias conditions on ionizing radiation damage of NPN and PNP transistors
Acta Physica Sinica
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Acta Phys. Sin  2013, Vol. 62 Issue (9): 098503     doi:10.7498/aps.62.098503
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The influence of bias conditions on ionizing radiation damage of NPN and PNP transistors
Li Xing-Ji1, Lan Mu-Jie2, Liu Chao-Ming1, Yang Jian-Qun1, Sun Zhong-Liang1, Xiao Li-Yi2, He Shi-Yu1
1. School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China;
2. School of Astronautics, Harbin Institute of Technology, Harbin 150001, China
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