Drain-induced barrier-lowering effect in surrounding-gate schottky barrier metal-oxide semiconductor field transistor
Acta Physica Sinica
Citation Search Quick Search
Acta Phys. Sin  2013, Vol. 62 Issue (10): 108502     doi:10.7498/aps.62.108502
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Current Issue| Archive| Adv Search  |   
Drain-induced barrier-lowering effect in surrounding-gate schottky barrier metal-oxide semiconductor field transistor
Xu Li-Jun, Zhang He-Ming
Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi’an 710071, China
Copyright © Acta Physica Sinica
Address: Institute of Physics, Chinese Academy of Sciences, P. O. Box 603,Beijing 100190 China
Tel: 010-82649294,82649829,82649863   E-mail: aps8@iphy.ac.cn